Enabling effective work function tuning by RF-PVD metal oxide on high-k gate dielectric

ECS Transactions

Volumn 13, Issue 1, 2008, Pages 143-150

  Yoshida, Naomi ^a   Tang, Xianmin ^a   Ahmed, Khaled ^a   Conti, Giuseppina ^a   Liu, Dave ^a   Agustin, Melody ^a   Hung, Steven ^a   Ku, Victor ^a   Chan, Osbert ^a   Liang, Robert ^a   Chen, Hao ^a   Wang, Rongjun ^a   Zheng, Bo ^a   Lazik, Christopher ^a   Jin, Miao ^a   Lavu, Kishore ^a   Chang, Chorng Ping ^a   Mandrekar, Tushar ^a   Gandikota, Srinivas ^a  

^a APPLIED MATERIALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; EFFECTIVE WORK FUNCTIONS; EQUIVALENT OXIDE THICKNESSES; FLAT BANDS; GATE FIRSTS; METAL GATE STACKS; METAL GATES; METAL OXIDES; PVD PROCESSES; ROBUST PROCESSES; VOLTAGE SHIFTS;

ALUMINA; DIELECTRIC MATERIALS; GATE DIELECTRICS; GATES (TRANSISTOR); LOGIC GATES; METALLIC COMPOUNDS; MOSFET DEVICES; PROBABILITY DENSITY FUNCTION; SILICON; TUNING; WORK FUNCTION;

METALS;

EID: 55649119756     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2911493     Document Type: Conference Paper

References (5)

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