Ferroelectric properties of direct-patternable la substituted Bi 4Ti3O12 thin films formed by photochemical metal-organic deposition

Journal of the Ceramic Society of Japan

Volumn 117, Issue 1365, 2009, Pages 604-607

  Park, Hyung Ho ^a   Park, Hyeong Ho ^a   Lee, Hong Sub ^a   Hill, Ross H ^b   Hwang, Yun Taek ^c  

^a Yonsei University   (South Korea)

^b SIMON FRASER UNIVERSITY   (Canada)

^c Hynix Semiconductor Inc   (South Korea)

Author keywords

BLT; Direct patterning; Photochemical reaction; Photoresist free

Indexed keywords

DEPOSITION; FERROELECTRICITY; LANTHANUM; MICROSTRUCTURE; ORGANOMETALLICS; PHOTOCHEMICAL REACTIONS; PHOTORESISTS; POLARIZATION; SURFACE PROPERTIES; THIN FILMS;

DIRECT-PATTERNING; FERROELECTRIC PROPERTY; LA SUBSTITUTED; LA SUBSTITUTIONS; PHOTOCHEMICAL METAL-ORGANIC DEPOSITION; PHOTORESIST-FREE; REMNANT POLARIZATIONS; SURFACE MICROSTRUCTURES;

FERROELECTRIC FILMS;

EID: 67649378839     PISSN: 18820743     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj2.117.604     Document Type: Article

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