Effect of etch gas on dry etching of ferroelectric Bi3.25La0.75Ti3O12 thin films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 3, 2003, Pages 1452-1455

  Song, Young Soo ^a   Kim, Hye In ^a   Chung, Chee Won ^a  

^a Inha University   (South Korea)

Author keywords

Bi3.25La0.75Ti3O12; Bismuth layer structured ferroelectric; C2Fe6; Cl2; FeR AM; HBr; Inductively coupled plasma etching

Indexed keywords

BISMUTH COMPOUNDS; DRY ETCHING; INDUCTIVELY COUPLED PLASMA; SCANNING ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCH GASES;

FERROELECTRIC THIN FILMS;

EID: 0038629289     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.1452     Document Type: Article

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