Etch damage evaluation on (Bi4-xLax)Ti3O12 thin films during the etch process using inductively coupled plasma sources

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 1108-1114

  Kim, Jong Gyu ^a   Kim, Gwan Ha ^a   Kim, Kyoung Tae ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

Ar Cl2 plasma; Bi4 xLaxTi3O12; Etch damage; QMS

Indexed keywords

CRYSTALLINE MATERIALS; ETCHING; INDUCTIVELY COUPLED PLASMA; PLASMA SOURCES; POLARIZATION; REMANENCE; TITANIUM;

ETCH DAMAGE; GAS MIXING RATIOS; PLASMA INDUCED DAMAGES; REMNANT POLARIZATION;

THIN FILMS;

EID: 33846084761     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.034     Document Type: Article

References (13)

1. Scott J.F. Ferroelectric memories (2000), Springer, New York 149pp
2. Shim S.I., Kim I.S., Park M.C., Kim Y.T., Kim S.I., and Lee C.W. J Korean Phys Soc 47 (2005) S276
3. Xu Y. Ferroelectric materials and their applications (1991), Elsevier, New York 301pp
4. Iwata M., Katsuraya K., Masaki M., Suzuki I., Yasuda N., and Ishibashi Y. J Korean Phys Soc 46 (2005) 1
5. Hahn Y.B., and Lee J.W. J Vac Sci Technol B 17 (1999) 334
6. Shibano T., Nakamura K., and Takenaga T. J Vac Sci Technol A 17 (1999) 799
7. Vrublevsky E.M., Gusev A.V., and Zhidkov A.G. High Energy Chem 24 (1990) 356
8. Kim D.P., and Kim C.I. Microelectron Eng 66 (2003) 912
9. Lide DR, editor. Handbook of chemistry and physics. New York: CRC Press; 1998-1999. p. 4-45, 4-64.
10. Woodworth J.R., Riley M.E., Miller P.A., Nichols C.A., and Hamilton T.W. J Vac Sci Technol A 15 (1997) 3015
11. Kim D.P., and Kim C.I. Microelectron Eng 63 (2002) 373
12. Lim K.T., Kim K.T., Kim D.P., and Kim C.I. J Vac Sci Technol A 21 (2003) 1563
13. Lee W.J., Cho C.Y., Kim S.H., You I.K., Kim B.W., Yu B.G., et al. Jpn J Appl Phys 38 Part 2 (1999) L1428