Etching mechanism of Bi4-xLaxTi3O 12 films in Ar/Cl2 inductively coupled plasma

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 343-348

  Kim, Dong Pyo ^a   Kim, Kyoung Tae ^a   Kim, Chang Il ^a   Efremov, A M ^a,b  

^a Chung Ang University   (South Korea)

^b IVANOVO STATE UNIVERSITY OF CHEMISTRY AND TECHNOLOGY   (Russian Federation)

Author keywords

Bi4 xLaxTi3O12; Cl 2 Ar; Langmuir probe; Optical emission spectroscopy

Indexed keywords

ARGON; BINDING ENERGY; CHLORINE; ELECTRON ENERGY LEVELS; ELECTRONS; EMISSION SPECTROSCOPY; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; PLASMA DIAGNOSTICS; PLASMA ETCHING; SURFACE REACTIONS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

BI4-XLAXTI3O12; CL2/AR; LANGMUIR PROBES; OPTICAL EMISSION SPECTROSCOPY;

BISMUTH COMPOUNDS;

EID: 1342323682     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01115-5     Document Type: Conference Paper

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