The role of wetting layer states on the emission efficiency of InAs/InGaAs metamorphic quantum dot nanostructures

Nanotechnology

Volumn 20, Issue 27, 2009, Pages

  Seravalli, L ^a   Trevisi, G ^a   Frigeri, P ^a   Franchi, S ^a   Geddo, M ^b   Guizzetti, G ^b  

^a IMEM CNR   (Italy)

^b UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

EMBEDDED QUANTUM DOTS; EMISSION EFFICIENCIES; EMISSION QUENCHING; ENERGY SEPARATIONS; ENGINEERED STRUCTURES; GAAS SUBSTRATES; INALAS; INAS/INGAAS; PHOTOLUMINESCENCE QUENCHING; PHOTOREFLECTANCE; QUANTUM DOT; QUANTUM DOT NANOSTRUCTURES; QUANTUM DOT TRANSITION; ROOM TEMPERATURE; THERMAL ESCAPE; THERMAL QUENCHING; WETTING LAYER; WETTING LAYER STATE;

ACTIVATION ENERGY; GALLIUM ALLOYS; LIGHT EMISSION; NANOSTRUCTURES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; QUENCHING; WETTING;

SEMICONDUCTOR QUANTUM DOTS;

ARSENIC; GALLIUM; INDIUM; INDIUM ARSENIDE; INDIUM GALLIUM ARSENIDE; NANOMATERIAL; QUANTUM DOT; UNCLASSIFIED DRUG; GALLIUM ARSENIDE; ORGANOARSENIC DERIVATIVE;

ARTICLE; ENERGY; MATERIALS TESTING; NANOCHEMISTRY; NANOTECHNOLOGY; PHOTOLUMINESCENCE; PRIORITY JOURNAL; CHEMISTRY; LUMINESCENCE; PHOTOCHEMISTRY; SPECTROSCOPY; WETTABILITY;

ARSENICALS; GALLIUM; INDIUM; LUMINESCENCE; NANOSTRUCTURES; PHOTOCHEMICAL PROCESSES; QUANTUM DOTS; SPECTRUM ANALYSIS; WETTABILITY;

EID: 67649361983     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/27/275703     Document Type: Article

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