Optical properties of low-strained inxGa1-xAs/GaAs quantum dot structures at the two-dimensional-three-dimensional growth transition

Journal of Applied Physics

Volumn 100, Issue 1, 2006, Pages

  Poloczek, P ^a   Sek G ^a   Misiewicz, J ^a   Loffler A ^b   Reithmaier, J P ^b,c   Forchel, A ^b  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b UNIVERSITY OF WÜRZBURG   (Germany)

^c UNIVERSITY OF KASSEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

OPTICAL TRANSITIONS; PHOTOREFLECTANCE; SOLID SOURCE MOLECULAR BEAM EPITAXY; WETTING LAYERS (WL);

SEMICONDUCTOR QUANTUM DOTS;

EID: 33746191718     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2208296     Document Type: Article

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