Photoreflectance evidence of the N-induced increase of the exciton binding energy in an InxGa1-xAs1-yNy alloy

Applied Physics Letters

Volumn 83, Issue 3, 2003, Pages 470-472

  Geddo, M ^a,b   Guizzetti, G ^c   Capizzi, M ^a   Polimeni, A ^a   Gollub, D ^d   Forchel, A ^d  

^a INFM   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF PAVIA   (Italy)

^d UNIVERSITY OF WÜRZBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CRYSTAL LATTICES; EXCITONS; GROUND STATE; NITROGEN;

PHOTOREFLECTANCE;

INDIUM ALLOYS;

EID: 0042126835     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1594279     Document Type: Article

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