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Vacuum

Volumn 83, Issue 11, 2009, Pages 1311-1316

Scaling behavior and structure transition of ZrO2 films deposited by RF magnetron sputtering

(3) Zhang, H H a Ma, C Y a Zhang, Q Y a

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

Author keywords

rf Magnetron sputtering; Structure; Substrate temperature; Surface morphology; ZrO2 films

Indexed keywords

AFM; GLASS SLIDES; GROWTH MECHANISMS; MORPHOLOGICAL AND STRUCTURAL EVOLUTION; POWER SPECTRAL DENSITY METHOD; RF MAGNETRON SPUTTERING; ROUGHNESS EXPONENT; SCALING BEHAVIOR; SHADOWING MECHANISMS; SI WAFER; SPATIALLY RESOLVED; STRUCTURAL TRANSITIONS; STRUCTURE; STRUCTURE TRANSITIONS; SUBSTRATE TEMPERATURE; SURFACE CHARACTERIZATION; ZRO2 FILMS;

ATOMIC FORCE MICROSCOPY; CRYSTAL ATOMIC STRUCTURE; GRAIN GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETRON SPUTTERING; MAGNETRONS; MORPHOLOGY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STRUCTURAL ANALYSIS; SUBSTRATES; SURFACE DIFFUSION; SURFACE PROPERTIES; SURFACE ROUGHNESS; THIN FILMS; ZIRCONIUM ALLOYS;

SURFACE MORPHOLOGY;

EID: 67649361515 PISSN: 0042207X EISSN: None Source Type: Journal
DOI: 10.1016/j.vacuum.2009.04.041 Document Type: Article

Times cited : (39)

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