Comparison of the synthesis of Ge nanocrystals in hafnium aluminum oxide and silicon oxide matrices

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 2, 2009, Pages 1577-1581

  Chew, H G ^a   Zheng, F ^b   Choi, W K ^a,b   Chim, W K ^a,b   Fitzgerald, E A ^a,c   Foo, Y L ^d  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Massachusetts Institute of Technology   (United States)

^d INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

Author keywords

Ge out diffusion; Germanium nanocrystals; Hafnium aluminum oxide

Indexed keywords

ALUMINUM OXIDES; ANNEALING TEMPERATURES; GE NANOCRYSTALS; GE OUT-DIFFUSION; GERMANIUM NANOCRYSTALS; NANOCRYSTAL FORMATION; OUT-DIFFUSION; OXIDE MATRIX; SI OXIDE;

ALUMINA; ALUMINUM; DIFFUSION; GERMANIUM; HAFNIUM; SILICON COMPOUNDS; SILICON OXIDES;

NANOCRYSTALS;

EID: 67649249350     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.C206     Document Type: Conference Paper

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