Study of CVD high-k gate oxides on high-mobility Ge and Ge/Si substrates

Thin Solid Films

Volumn 508, Issue 1-2, 2006, Pages 1-5

  Van Elshocht, S ^a   Caymax, M ^a   Conard, T ^a   De Gendt, S ^a   Hoflijk, I ^a   Houssa, M ^a   Leys, F ^a   Bonzom, R ^a   De Jaeger, B ^a   Van Steenbergen, J ^a   Vandervorst, W ^a   Heyns, M ^a   Meuris, M ^a  

^a IMEC   (Belgium)

Author keywords

Germanium; Hafnium germanate; Hafnium oxide; Interface states

Indexed keywords

EPITAXIAL GROWTH; HAFNIUM COMPOUNDS; PASSIVATION; SILICON; THIN FILMS; TRANSISTORS;

CAPPING LAYER; HAFNIUM GERMANATE; HAFNIUM OXIDE; INTERFACE STATES;

GERMANIUM;

EID: 33646090844     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.406     Document Type: Article

References (18)

1. Prabhakaran K., and Ogino T. Surf. Sci. 325 (1995) 263
2. Van Elshocht S., Delabie A., Brijs B., Caymax M., Conard T., Onsia B., Puurunen R., Richard O., Van Steenbergen J., Zhao C., Meuris M., and Heyns M.M. Solid State Phenomena vols. 103-104 (2005) 31
3. Onsia B., Conard T., De Gendt S., Heyns M., Hoflijk I., Mertens P., Meuris M., Raskin G., Sioncke S., Teerlinck I., Theuwis A., Van Steenbergenk J., and Vinckier C. Solid State Phenomena vols. 103-104 (2005) 27
4. Van Elshocht S., Brijs B., Caymax M., Conard T., Chiarella T., De Gendt S., De Jaeger B., Kubicek S., Meuris M., Onsia B., Richard O., Teerlinck I., Van Steenbergen J., Zhao C., and Heyns M. Appl. Phys. Lett. 85 (2004) 3824
5. Kim H., Chui C.O., Sarawat K.C., and McIntyre P. Appl. Phys. Lett. 83 (2003) 2647
6. Delabie A., Puurunen R.L., Brijs B., Caymax M., Conard T., Onsia B., Richard O., Vandervorst W., Zhao C., Heyns M.M., Meuris M., Viitanen M.M., Brongersma H.H., de Ridder M., Goncharova L.V., Garfunkel E., Gustafsson T., and Tsai W. J. Appl. Phys. 97 (2005) 064104
7. Ponpon J.P. Nucl. Instrum. Methods Phys. Res., A 457 (2000) 262
8. Wang Y., Hu Y.Z., and Irene E.A. J. Vac. Sci. Technol., A 12 (1994) 1309
9. Van Elshocht S., Caymax M., De Gendt S., Conard T., Pétry J., Daté L., Pique D., and Heyns M.M. J. Electrochem. Soc. 151 (2004) F77
10. Smith F.W., and Ghidini G. J. Electrochem. Soc. 129 (1982) 1300
11. Horn K.M., Chason E., Tsao J.Y., Floro J.A., and Picraux S.T. Surf. Sci. 320 (1994) 174
12. C.O. Chui, H. Kim, D. Chi, B.B. Triplett, P.C. McIntyre, K.C. Saraswat, International Electron Devices Meeting, San Francisco, USA, December 8-11, 2002, p. 437.
13. W.P. Bai, N. Lu, J. Liu, A. Ramirez, D.L. Kwong, D. Wristers, A. Ritenour, L. Lee, D. Antoniadis, Symposium on VLSI Technology and Symposium on VLSI Circuits, Kyoto, Japan, June 1-14, 2003, p. 121.
14. B. De Jaeger, M. Houssa, A. Satta, S. Kubicek, P. Verheyen, J. Van Steenbergen, J. Croon, B. Kaczer, S. Van Elshocht, A. Delabie, E. Kunnen, E. Sleeckx, I. Teerlinck, 34th European Solid-State Device Research Conference, Leuven, Belgium, September 20-24, 2004, 189.
15. Wu N., Zhang Q., Zhu C., Chan D.S.H., Du A., Balasubramanian N., Li M.F., Chin A., Sin J.K.O., and Kwong D.L. Electron Device Lett. 25 (2004) 631
16. F.E. Leys, R. Bonzom, R. Loo, O. Richard, B. De Jaeger, J. Van Steenbergen, K. Dessein, T. Conard, J. Rip, H. Bender, W. Vandervorst, M. Meuris, M. Caymax, Fourth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, Japan, May 23-26, 2005, Thin Solid films, submitted for publication.
17. B. De Jaeger, R. Bonzom, F. Leys, O. Richard, J. Van Steenbergen, G. Winderickx, E. Van Moorhem, G. Raskin, F. Letertre, T. Billon, M. Meuris and M. Heyns, 14th Bi-Annual Conference on Insulating Films on Semiconductors, Leuven, Belgium, June 22-24, 2004, in press.
18. Green M.L., Ho M.-Y., Busch B., Wilk G.D., Sorsch T., Conard T., Brijs B., Vandervorst W., Räisänen P.I., Muller D., Bude M., and Grazul J. J. Appl. Phys. 92 (2002) 7168