High quality, large surface area, homoepitaxial MPACVD diamond growth

Diamond and Related Materials

Volumn 18, Issue 5-8, 2009, Pages 683-697

  Silva, F ^a   Achard, J ^a   Brinza, O ^a   Bonnin, X ^a   Hassouni, K ^a   Anthonis, A ^b   De Corte, K ^b   Barjon, J ^c  

^a UNIVERSITÉ PARIS 13   (France)

^b HRD Antwerp NV   (Belgium)

^c LABORATOIRE DES SCIENCES DU CLIMAT ET DE L ENVIRONNEMENT   (France)

Author keywords

Crystal growth; Homoepitaxial diamond; Microwave plasma engineering; Plasma modelling

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEFECT DENSITY; SURFACE DEFECTS; SYNTHETIC DIAMONDS;

3D GEOMETRICAL MODEL; CRYSTALLINE DEFECTS; DEPOSITION PRESSURES; HOMOEPITAXIAL DIAMOND; INFLUENCE OF PROCESS PARAMETERS; MICROWAVE PLASMA; STRINGENT REQUIREMENT; SUBSTRATE PRE-TREATMENTS;

FILM GROWTH;

EID: 67349271160     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.01.038     Document Type: Article

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