Single crystal CVD diamond growth strategy by the use of a 3D geometrical model: Growth on (113) oriented substrates

Diamond and Related Materials

Volumn 17, Issue 7-10, 2008, Pages 1067-1075

  Silva, F ^a,b,c   Achard, J ^a,b,c   Bonnin, X ^a,b,c   Brinza, O ^a,b,c   Michau, A ^a,b,c   Secroun, A ^a,b,c   De Corte, K ^a,b,c   Felton, S ^a,b,c   Newton, M ^a,b,c   Gicquel, A ^a,b,c  

^a CNRS   (France)

^b HRD Antwerp NV   (Belgium)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Crystal morphology; CVD processes; Diamond; Growth models; Single crystal growth

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); CRYSTAL GROWTH; CRYSTALLIZATION; DIAMONDS; ELECTRON SPIN RESONANCE SPECTROSCOPY; GLOW DISCHARGES; GRAIN BOUNDARIES; METHANATION; METHANE; MORPHOLOGY; PLANNING; POWDERS; SINGLE CRYSTALS; STRATEGIC PLANNING; SUBSTRATES; SURFACE TREATMENT; THREE DIMENSIONAL;

BASIC PARAMETERS; CRYSTAL EDGES; CRYSTAL MORPHOLOGIES; CRYSTAL MORPHOLOGY; CVD PROCESSES; DEPOSITION TIME; DIAMOND; EQUILIBRIUM SHAPES; GAS DISCHARGING; GEOMETRICAL MODELLING; GROWTH CONDITIONS; GROWTH MODELING; GROWTH MODELS; GROWTH STRATEGIES; GROWTH TIME; METHANE CONCENTRATIONS; MICROWAVE CVD; MODEL RESULTS; OPERATING POINTS; RELATIVE DISPLACEMENTS; SINGLE CRYSTAL CVD DIAMOND; SINGLE CRYSTAL DIAMOND; SINGLE CRYSTAL GROWTH; SURFACE PRE TREATMENTS;

ECOLOGY;

EID: 48849089433     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2008.01.006     Document Type: Article

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