Room temperature metal-insulator-semiconductor (MIS) hydrogen sensors based on chemically surface modified porous silicon

Sensors and Actuators, B: Chemical

Volumn 140, Issue 1, 2009, Pages 65-72

  Kanungo, J ^a   Saha, H ^a   Basu, S ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

MIS hydrogen sensor; Noble metals; Porous silicon; Stability; Surface modification

Indexed keywords

CHEMICAL METHOD; CONSISTENT PERFORMANCE; ELECTROCHEMICAL ANODIZATION; ELECTROLESS; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GRAZING-INCIDENCE X-RAY DIFFRACTION; HYDROGEN SENSOR; METAL-INSULATOR-SEMICONDUCTOR; MIS HYDROGEN SENSOR; MIS STRUCTURE; MODIFIED SURFACES; NOBLE METALS; OHMIC CONTACT FORMATION; RECOVERY TIME; RESPONSE TIME; ROOM TEMPERATURE; SURFACE MODIFICATION; SURFACE STATE; SURFACE-MODIFIED; TRANSIENT RESPONSE;

ALUMINUM; CHLORINE COMPOUNDS; DISTILLATION; FIELD EMISSION; FIELD EMISSION MICROSCOPES; HYDROGEN; METAL INSULATOR BOUNDARIES; METAL RECOVERY; METALS; MIS DEVICES; OHMIC CONTACTS; PALLADIUM; PLATINUM; PRECIOUS METALS; RUTHENIUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; SENSORS; SILVER; STABILITY; SURFACE TREATMENT; SWITCHING CIRCUITS; X RAY DIFFRACTION ANALYSIS;

POROUS SILICON;

EID: 67349217423     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.04.013     Document Type: Article

References (22)

1. Nienhause H., Berg H.S., Gergen B., and Majumder A. Selective H atom sensors using ultra thin Ag/Si Schottky diodes. Appl. Phys. Lett. 74 (1999) 4046-4048
2. Basu S., and Dutta A. Room temperature hydrogen sensors based on ZnO. Mater. Chem. Phys. 47 (1997) 93-96
3. Hazra S.K., and Basu S. High sensitivity and fast response hydrogen sensors based on electrochemically etched porous titania thin films. Sens. Actuators B: Chem. 115 (2006) 403-411
4. 2. Sens. Actuators B: Chem. 52 (1998) 30-37
5. Lewis S.E., DeBoer J.R., Gole J.L., and Hesketh P.J. Sensitive selective and analytical improvements to a porous silicon gas sensor. Sens. Actuators B: Chem. 110 (2005) 54-65
6. Mizsei J. Gas sensor applications of porous Si layers. Thin Solid Films 515 (2007) 8310-8315
7. Polishchuk V., Souteyrand E., Martin J.R., Strikha V.I., and Skryshevsky V.A. A study of hydrogen detection with palladium modified porous silicon. Anal. Chim. Acta 375 (1998) 205-210
8. Tsamis C., Tsoura L., Nassiopoulou A.G., Travlos A., Salmas C.E., Hatzilyberis K.S., and Ndroutsopoulos G.P. Hydrogen catalytic oxidation reaction on Pd-doped porous silicon. IEEE Sens. J. 2 (2002) 89-95
9. Luongo K., Sine A., and Bhansali S. Development of a highly sensitive porous Si-based hydrogen sensor using Pd nano-structures. Sens. Actuators B: Chem. 111-112 (2005) 125-129
10. Sekhar P.K., Sine A., and Bhansali S. Effect of varying the nanostructured porous-Si process parameters on the performance of Pd-doped hydrogen sensor. Sens. Actuators B: Chem. 127 (2007) 74-81
11. Rahimi F., and Irajizad A. Effective factors on Pd growth on porous silicon by electroless-plating: response to hydrogen. Sens. Actuators B: Chem. 115 (2006) 164-169
12. X gas detection. Sens. Actuators B 65 (2000) 154-156
13. Litovchenko V.G., Gorbanyuk T.I., Solntsev V.S., and Evtukh A.A. Mechanism of hydrogen, oxygen and humidity sensing by Cu/Pd-porous silicon-silicon structure. Appl. Surf. Sci. 234 (2004) 262-267
14. Kwok W.M., Bow Y.C., Chan W.Y., Poon M.C., Han P.G., and Wong H. Study of porous silicon gas sensor. Proceedings of IEEE on Electron Devices Meeting. Hong Kong, June 26 (1999)
15. Pedrero L.O., Pena-Sierra R., and Romero Paredes G.R. Gas sensor based on porous silicon and palladium oxide clusters. 1st International Conference on Electrical and Electronics Engineering (ICEEE). Acapulco, Mexico, September 8-10 (2004)
16. Kanungo J., Pramanik C., Bandopadhyay S., Gangopadhyay U., Das L., Saha H., and Gettens R.T.T. Improved contacts on porous silicon layer by electroless nickel plating and copper thickening. Semicond Sci. Technol. 21 (2006) 964-970
17. Wang M., and Feng Y. Palladium-silver thin film for hydrogen sensing. Sens. Aactuators B: Chem. 123 (2007) 101-106
18. Shivaraman M.S., Lundstrom I., Svensson C., and Hammarsten H. Hydrogen sensitivity of palladium-thin-oxide-silicon Schottky barriers. Electron. Lett. 12 (1976) 483-484
19. Deresmes D., Marissael V., Stievenard D., and Ortega C. Electrical behaviour of aluminium-porous silicon junctions. Thin Solid Films 255 (1995) 258-261
20. Johansson A., Forsth M., and Rosen A. A comparative study of high-temperature water formation and OH desorption on polycrystalline palladium and platinum catalysts. Surf. Sci. 529 (2003) 247-266
21. Roy S., Jecob C., Lang C., and Basu S. Studies on Ru/3C-SiC Schottky junctions for high temperature hydrogen sensor. J. Electrochem. Soc. 150 (2003) H135-H139
22. Chen H.I., and Chou Y.I. Evaluation of the perfection of the Pd-InP Schottky interface from the energy viewpoint of hydrogen adsorbates. Semicond. Sci. Technol. 19 (2004) 39-44