Hydrogen catalytic oxidation reaction on Pd-doped porous silicon

IEEE Sensors Journal

Volumn 2, Issue 2, 2002, Pages 89-95

  Tsamis, Christos ^a,b   Tsoura, Loukia ^b   Nassiopoulou, Androula G ^a,b   Travlos, Anastasios ^c   Salmas, Constantinos E ^d   Hatzilyberis, Kostas S ^d   Androutsopoulos, George P ^d  

^a IEEE   (Greece)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^c INSTITUTE OF MATERIALS SCIENCE   (Greece)

^d NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

Calorimetric sensors; Catalytic materials; Chemical sensors; Electroless deposition; Hydrogen oxidation reaction; Porous silicon

Indexed keywords

CALORIMETRIC SENSORS; CATALYTIC MATERIALS; HYDROGEN OXIDATION REACTION; PROCESSING CONDITIONS;

CALORIMETRY; CATALYSIS; CATALYSTS; DOPING (ADDITIVES); ELECTROLESS PLATING; HYDROGEN; OXIDATION; PALLADIUM; POROUS SILICON;

CHEMICAL SENSORS;

EID: 2942740694     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2002.1000248     Document Type: Article

References (26)

1. L. T. Canhara, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett., vol. 57, p. 1046, 1990.
2. W. Lang, "Thermal conductivity of porous silicon," in Properties of Porous Silicon. ser. EMIS Datareview Series, L. Canham, Ed. London, U.K.: INSPEC, 1997, p. 138.
3. A. G. Nassiopoulou and G. Kaltsas, "Porous silicon as an effective material for thermal isolation on bulk crystalline silicon," Phys. Solid State A, vol. 182, p. 307, 2000.
4. D. Pagonis, C. Tsamis, G. Kaltsas, and A. G. Nassiopoulou, "Effectiveness of local thermal isolation by porous silicon in a silicon thermal sensor," in First Conf. Microelectron., Microsyst., Nanotechnol., MMN 2000, Athens, Greece, 2000.
5. D. Papadimitriou, L. Tsoura, C. Tsamis, and A. G. Nassiopoulou, "Thermal conductivity of porous silicon layers probed by micro-Raman spectroscopy," in First Conf. Microelectron., Microsyst., Nanotechnol., MMN 2000, Athens, Greece, 2000.
6. G. Kaltsas and A. G. Nassiopoulou, "Novel C-MOS compatible monolithic gas flow sensor with porous silicon thermal isolation," Sens. Actuators A, vol. 76, p. 133, 1999.
7. V. Polishchuk, E. Souteyrand, J. R. Martin, V. I. Strikha, and V. A. Skryshevsky, "A study of hydrogen detection with palladium modified porous silicon," Anal. Chim. Acta, vol. 375, p. 205, 1998.
8. x sensing," Sens. Actuators B, vol. 68, p. 74, 2000.
9. W. Zhang, E. A. de Vasconcelos, H. Uchida, T. Katsube, T. Nakatsubo, and Y. Nishioka, "A study of silicon Schottky diode structures for Nox gas detection," Sens. Actuators B, vol. 65, p. 154, 2000.
10. C. Baratto, G. Faglia, G. Sberveglieri, L. Boarino, A. M. Rossi, and G. Amato, "Front-side micromachined porous silicon nitrogen dioxide gas sensor," Thin Solid Films, vol. 391, p. 261, 2001.
11. A. N. Parbukov, V. I. Beklemyshev, V. M. Gontar, I. Makhonin, S. A. Gavrilov, and S. C. Bayliss, "The production of a novel stain etched porous silicon, metallization of the porous surface and application in hydrocarbon sensors," Mater. Sci. Eng. C, vol. 15, p. 121, 2001.
12. 2 produces porous silicon," Appl. Phys. Lett., vol. 77, no. 16, p. 2572, 2000.
13. R. H. Perry and D. W. Green, Perry's Chemical Engineers' Handbook, 7th ed. New York: McGraw-Hill, pp. 11-27.
14. G. Kaltsas and A. G. Nassiopoulou, "Frontside bulk silicon micromachining using porous-silicon technology," Sens. Actuators A, vol. 65, p. 175, 1998.
15. Coulthard and T. K. Sham, "Morphology of porous silicon layers: Image of active sites from reductive deposition of copper onto the surface," Appl. Surf. Sci., vol. 126, p. 287, 1998.
16. A. Grosman and C. Ortega, "Chemical composition of fresh porous silicon," in Properties of Porous Silicon. ser. EMIS Datareview Series, L. Canham, Ed. London, U.K.: INSPEC, 1997, p. 145.
17. M. Ostling, C. S. Petersson, P. Johansson, A. Wilstrom, and G. Possnert, "Silicon surface barrier detector resolution in the 2-30MeV Ranger," Nucl. Instrum. Methods B, vol. 15, p. 729, 1986.
18. C. Ortega, A. Grosman, and V. Morazzani, "Ion beam analysis of thin films. Applications to porous silicon," in Porous Silicon Science and Technology, J. Vial and J. Derrien, Eds. New York: Springer-Verlag, 1995, p. 157.
19. D. G. Vlachos, "Homogeneous-heterogeneous oxidation reactions over platinum and inert surfaces," Chem. Eng. Sci., vol. 51, p. 2429, 1996.
20. H. Ikeda, J. Sato, and F. A. Williams, "Surface kinetics for catalytic combustion of hydrogen-air mixtures on platinum at atmospheric pressure in stagnation flows," Surf. Sci., vol. 326, p. 11, 1995.
21. J. K. Maragozis, Chemical Process Engineering. Athens, Greece: NTUA, 1982, pp. 65-74.
22. K. K. Unger, G. Kreysa, and J. P. Baselt, "Characterization of porous solids V," in Proc. COPS-V. Heidelberg, Germany: Elsevier, 2000, vol. 128, Studies in Surface Science and Catalysis.
23. O. Levenspiel, Chemical Rection Engineering, 2nd ed. New York: Wiley, 1972.
24. R. B. Bird, W. E. Stewart, and E. N. Lightfoot, Transport Phenomena. New York: Wiley, 1960.
25. 2 reaction on Pd and of its influence on the hydrogen response of a hydrogen sensitive Pd metal-oxide-semiconductor device," Surf. Sci., vol. 350, p. 91, 1996.
26. M. Johansson, I. Ludstrom, and L. G. Ekdahl, "Bridging the pressure gap for palladium metal-insulator-semiconductor hydrogen sensors in oxygen containing environments," J. Appl. Phys., vol. 84, no. 1, p. 44, 1998.