Studies on Ru/3C-SiC Schottky junctions for high temperature hydrogen sensors

Journal of the Electrochemical Society

Volumn 150, Issue 6, 2003, Pages

  Roy, S ^a   Jacob, C ^a   Lang, C ^b   Basu, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b UNIVERSITY OF CAPE TOWN   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DEGRADATION; HIGH TEMPERATURE EFFECTS; HYDROGEN; INTERFACES (MATERIALS); MATERIALS TESTING; RUTHENIUM; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

HYDROGEN SENSORS; SCHOTTKY JUNCTIONS; SENSOR RESPONSE; TRANSIENT RESPONSE;

CHEMICAL SENSORS;

EID: 0037870689     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1573202     Document Type: Article

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