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Volumn 30, Issue 4, 2009, Pages 356-358

Degradation of InGaN-based laser diodes related to nonradiative recombination

Author keywords

Degradation; Gallium nitride; Laser diode (LD); Nonradiative recombination; Reliability

Indexed keywords

ACTIVE LAYERS; CURRENT LEVELS; DEGRADATION PROCESS; DRIVING FORCES; ELECTRICAL STRESS; LASER DIODE (LD); NONRADIATIVE RECOMBINATION; NONRADIATIVE RECOMBINATION RATES; OPERATING CURRENTS; OPTICAL TECHNIQUES; SLOPE EFFICIENCIES; STRESS TESTS; THRESHOLD CURRENTS;

EID: 67349216250     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2014570     Document Type: Article
Times cited : (20)

References (14)
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  • 6
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    • Nov, Dec
    • S. Tomiya, T. Hino, S. Goto, M. Takeya, and M. Ikeda, "Dislocation related issues in the degradation of GaN-based laser diodes," IEEE J. Sel. Topics Quantum Electron., vol. 10, no. 6, pp. 1277-1286, Nov./ Dec. 2004.
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  • 13
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    • Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics
    • Oct
    • H. Y. Ryu, K. H. Ha, J. H. Chae, K. S. Kim, J. K. Son, O. H. Nam, Y. J. Park, and J. I. Shim, "Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics," Appl. Phys. Lett., vol. 89, no. 17, p. 171-106, Oct. 2006.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.