In situ measurements and modeling of carbon nanotube array growth kinetics during chemical vapor deposition

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 2, 2005, Pages 223-240

  Puretzky, A A ^a,b   Geohegan, D B ^a   Jesse, S ^a   Ivanov, I N ^a,b   Eres, G ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b University of Tennessee Knoxville   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACETYLENE; ACTIVATION ENERGY; CARBON NANOTUBES; CATALYST POISONING; COATINGS; EVAPORATION; FEEDSTOCKS; GROWTH KINETICS; HIGH TEMPERATURE EFFECTS; LASER BEAMS; RATE CONSTANTS; SILICON; TRANSMISSION ELECTRON MICROSCOPY;

GROWTH RATES; TERMINAL LENGTHS; TIME-RESOLVED REFLECTIVITY (TRR); VERTICALLY ALIGNED NANOTUBE ARRAYS (VANTA);

CHEMICAL VAPOR DEPOSITION;

EID: 18844446423     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-005-3256-7     Document Type: Article

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