Universal Correlation between flatband voltage and electron mobility in TiN/HfSiON devices with MgO or La2O3 incorporation and stack variation

Japanese Journal of Applied Physics

Volumn 47, Issue 10 PART 1, 2008, Pages 7780-7783

  Mise, Nobuyuki ^a,b   Kadoshima, Masaru ^a   Morooka, Tetsu ^a   Eimori, Takahisa ^a   Nara, Yasuo ^a   Ohji, Yuzuru ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b HITACHI LTD   (Japan)

Author keywords

Electron mobility; Flatband voltage; Hf based high k gate dielectric; La2O3; MgO; TiN

Indexed keywords

DIELECTRIC DEVICES; ELECTRONS; GATE DIELECTRICS; GATES (TRANSISTOR); HAFNIUM; HAFNIUM COMPOUNDS; LANTHANUM; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

EFFECTIVE FIELDS; FIXED CHARGES; FLATBAND VOLTAGE; HF-BASED HIGH-K GATE DIELECTRIC; LA2O3; MGO; WORK-FUNCTION;

ELECTRON MOBILITY;

EID: 62249119894     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.7780     Document Type: Article

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