Advanced poly-Si NMIS and poly-Si/TiN PMIS hybrid-gate high-k CMIS using PVD/CVD-stacked TiN and local strain technique

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2007, Pages 214-215

  Nishida, Y ^a   Kawahara, T ^a   Sakashita, S ^a   Mizutani, M ^a   Yamanari, S ^a   Higashi, M ^a   Murata, N ^a   Inoue, M ^a   Yugami, J ^a   Endo, S ^a   Hayashi, T ^a   Yamashita, T ^a   Oda, H ^a   Inoue, Y ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; TIN; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

LOCAL STRAINS; POLY-SI; VLSI TECHNOLOGIES;

POLYSILICON;

EID: 47249139076     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIT.2007.4339697     Document Type: Conference Paper

References (11)

1. M. Inoue et al., IEDM Tech. Dig. (2005), p. 425
2. T. Hayashi et al., IEDM Tech. Dig. (2005), p. 927
3. Y. Nishida et al., VLSI Tech. Dig. (2006), p. 216.
4. T. Hayashi et al., IEDM Tech. Dig. (2006), p. 247
5. K. Ohta et al., IEDM Tech. Dig. (2002), p. 27
6. A. Shimizu et al., IEDM Tech. Dig. (2001), p. 433
7. X. Chen et al., VLSI Tech. Dig. (2006), p. 74.
8. S. Sakashita et al., Extended Abstracts of SSDM (2006), p. 1130
9. T. Hoffmann et al., IEDM Tech. Dig. (2006), p. 269
10. S. K. Han et al., IEDM Tech. Dig. (2006), p. 621
11. W. J. Taylor Jr. et al., IEDM Tech. Dig. (2006), p. 625