Highly manufacturable single metal gate process using ultra-thin metal inserted poly-Si stack (UT-MIPS)

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2006, Pages

  Han, Sung Kee ^a   Jung, Hyung Suk ^a   Lim, Hajin ^a   Kim, Min Joo ^a   Lee, Cheol Kyu ^a   Lee, Mong Sub ^a   You, Ng Sub ^a   Baik, Hion Suck ^b   Chung, Young Su ^b   Lee, Eunha ^b   Lee, Jong Ho ^a   Lee, Nae In ^a   Kang, Ho Kyu ^a  

^a SAMSUNG Electronics   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON DEVICES; FIELD EFFECT TRANSISTORS; OPTIMIZATION; PLASMA WAVES; POLYSILICON; SILICON;

DEVICE PERFORMANCES; DRIVE CURRENTS; MASS-PRODUCTION; METAL GATES; METAL INSERTED POLY-SI STACK; MOBILITY ENHANCEMENT; OPERATION VOLTAGES; PMOS NBTI; RELIABILITY CHARACTERISTICS; SHORT CHANNELS;

METALS;

EID: 46049085229     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2006.346860     Document Type: Conference Paper

References (5)

1. S. Yamaguchi, et al., Symp. VLSI Tech., p. 191, 2006
2. S.C. Song, et al., Symp. VLSI Tech., p.208, 2006
3. H.Y. Yu, et al., Symp. VLSI Tech., p. 120, 2006
4. S. K. Han, et al., Ext. Abstract SISC P-5, 2005
5. H.-S. Jung, et al., Proc. of IRPS., p.50, 2005