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Volumn 129, Issue 9, 2009, Pages 1010-1014
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Clustering effects in optical properties of BGaAs/GaAs epilayers
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Author keywords
BGaAs; DDX; MOCVD; Photoluminescence
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Indexed keywords
BGAAS;
BORON ATOM;
BORON CONCENTRATIONS;
CLUSTERING EFFECT;
DDX;
EMISSION ENERGIES;
GAAS;
HIGH TEMPERATURE RANGE;
HIGH-RESOLUTION X-RAY DIFFRACTION;
LOCALIZED STATE;
LOW TEMPERATURES;
METALORGANIC CHEMICAL VAPOR DEPOSITION;
MOCVD;
NONUNIFORM;
PL BANDS;
PL INTENSITY;
TEMPERATURE RANGE;
TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE;
ACTIVATION ENERGY;
BORON;
EPILAYERS;
GALLIUM ALLOYS;
LATTICE MISMATCH;
LAWS AND LEGISLATION;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
OPTICAL PROPERTIES;
ORGANIC CHEMICALS;
ORGANOMETALLICS;
PHOTOLUMINESCENCE;
QUENCHING;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR QUANTUM WELLS;
X RAY DIFFRACTION ANALYSIS;
BORON COMPOUNDS;
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EID: 67349167052
PISSN: 00222313
EISSN: None
Source Type: Journal
DOI: 10.1016/j.jlumin.2009.04.013 Document Type: Article |
Times cited : (12)
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References (18)
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