Comparative optical study of GaAs1-xNx/GaAs and B xGa1-xAs/GaAs epilayers

IEE Proceedings: Optoelectronics

Volumn 151, Issue 5, 2004, Pages 342-345

  Saidi, F ^a   Hassen, F ^a   Maaref, H ^a   Dumont, H ^b   Monteil, Y ^b  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

^b UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BORON; BORON COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SPECTROSCOPY; THERMAL EFFECTS;

BAND EMISSION; PHOTOLUMINESCENCE SPECTROSCOPY; TEMPERATURE DEPENDENCE;

SEMICONDUCTOR LASERS;

EID: 10844238133     PISSN: 13502433     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1049/ip-opt:20040938     Document Type: Article

References (21)

1. Bellaiche, L., Wei, S., and Zunger, A.: 'Effects of atomic short range order on the electronic and optical properties of GaAsN, GaInN, and GaInAs alloys', Phys. Rev. B, Condens. Matter, 1996, 54, p. 17568
2. Weyers, M., Sato, M., and Ando, H.: 'Red shift of photoluminescence and Absorption in dilute GsAsN alloy layers', Jpn. J. Appl. Phys., 1992, 31, p. 853
3. x with x < 0.03', Phys. Rev. Lett., 1999, 82, p. 312
4. Bellaiche, L., Wei, S.H., and Zunger, A.: 'Band gaps of GaPN and GaAsN alloys', Appl. Phys. Lett., 1997, 70, p. 3558
5. Pozina, G., Ivanov, I., and Monemar, B.: 'Properties of molecular-beam epitaxy-grown GaAsN from optical spectroscopy', J. Appl. Phys., 1998, 84, p. 3830
6. Onabe, K., Aoki, D., Wu, J., Yaguchi, H., and Suiraki, Y.: 'MOVPE Growth and luminescence properties of GaAsN alloys with higher nitrogen concentrations', Phys. Status Solidi A, 1999, 176, p. 231
7. Buyanova, I.A., Chen, W.M., Pozina, G., Bergman, J.P., Monemar, B., Xin, H.P., and Tu, C.W.: 'Mechanism for low temperature photoluminescence in GaAsN/GaAs structures grown by molecular-beam epitaxy', Appl. Phys. Lett., 1999, 75, p. 501
8. Geisz, J.F., Freidman, D.J., Reedy, R.C., and Barber, G.: 'Alternative boron precursors for BGaAs epitaxy', J. Electron. Mater., 2001, 30, p. 1387
9. Tisch, U., Finkman, E., and Salzman, J.: 'The anomalous band gap bowing in GaAsN', Appl. Phys. Lett., 2002, 81, p. 463
10. Francoeur, S., Sivaraman, G., Qlu, Y., Nikishin, S., and Temkin, H.: 'Luminescence of as-grown and thermally annealed GaAsN/GaAs', Appl. Phys. Lett., 1998, 72, p. 1857
11. Zhang, Y., Mascarenhas, A., Xin, H.P., and Tu, C.W.: 'Formation of an impurity band and its quantum confinement in heavily doped GaAs:N', Phys. Rev. B, Condens. Matter, 2000, 61, p. 7479
12. Hart, Gus L.W., and Zunger Alex: 'Electronic structure of BAs and boride III-V alloys', Phys. Rev. B, Condens. Matter, 2000, 62, p. 13522
13. 1-x alloys', J. Appl. Phys., 2003, 93, p. 2696
14. Szwacki, N.G., and Boguslawski, P.: 'GaAs:N vs GaAs:B alloys: Symmetry-induced effects', Phys. Rev. B, Condens. Matter Mater. Phys. 2001, 64, p. 161201(R)
15. Gupta, V.K., Koch, M.W., Wathing, N.J., Gao, Y., and Wicks, G.W.: 'Molecular beam epitaxial growth of BGaAs ternary compounds', J. Electron. Mater., 2000, 29, p. 1387
16. Saidi, F., Hassen, F., Maaref, H., Auvray, L., Dumont, H., and Monteil, Y.: 'Exciton localization effects in GaAsN/GaAs epilayers grown by MOCVD', Mater. Sci. Eng. C, Biomin. Supramol. Syst., 2002, 21 p. 245
17. x/GaAs(001) interface grown by metalorganic vapor phase epitaxy', Appl. Phys. Lett., 2002, 80, p. 2460
18. Kaschner, A., Luttgert, T., Born, H., and Hoffmann, A.: 'Recombination mechanisms in GaInNAs/GaAs multiple quantum wells', Appl. Phys. Lett. 2001, 78, p. 1391
19. Geisz, J.F., Freidman, D.J., Olson, J.M., Kurtz, S.R., Reedy, R.C., Swartzlander, A.B., Keyes, B.M., and Norman, A.G.: 'BGaInAs alloys lattice matched to GaAs', Appl. Phys. Lett., 2000, 76, p. 1443
20. 1-x As/GaAs(001) epilayers', J. Cryst. Growth., 2003, 248, p. 463
21. Geisz, J.F., Friedman, D.J., Kurtz, S., Olson, J.M., Swartzlander, A.B., Reedy, R.C., and Norman, A.G.: 'Epitaxial growth of BGaAs and BGaInAs by MOCVD', J. Cryst. Growth., 2001, 225, p. 372