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Volumn 5, Issue 2, 2008, Pages 454-459

Theory of electronic structure of BGaAs and related alloys

Author keywords

[No Author keywords available]

Indexed keywords

ANTICROSSINGS; B ATOMS; BAND DISPERSIONS; BAND EDGE; BAND GAPS; BLUE SHIFT; CONDUCTION BAND EDGE; DEFECT LEVELS; ELECTRON EFFECTIVE MASS; THEORY OF ELECTRONIC STRUCTURE; TIGHT BINDING MODEL; VIRTUAL CRYSTAL APPROXIMATION;

EID: 67349099654     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200777456     Document Type: Conference Paper
Times cited : (19)

References (21)
  • 1
    • 85014169645 scopus 로고    scopus 로고
    • For a review see: edited by M. Henini Elsevier Science Ltd.
    • For a review see: Dilute Nitride Semiconductors, edited by M. Henini (Elsevier Science Ltd., 2005).
    • (2005) Dilute Nitride Semiconductors


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.