Optical investigation of InGaAs-capped InAs quantum dots: Impact of the strain-driven phase separation and dependence upon post-growth thermal treatment

Journal of Luminescence

Volumn 127, Issue 2, 2007, Pages 741-746

  Ilahi, B ^a   Sfaxi, L ^a   Maaref, H ^a  

^a FACULTÉ DES SCIENCES DE MONASTIR   (Tunisia)

Author keywords

Photoluminescence; Quantum dots; Strain; Thermal annealing

Indexed keywords

HEAT TREATMENT; INDIUM COMPOUNDS; PHASE SEPARATION; PHOTOLUMINESCENCE; SELF ASSEMBLY;

POST GROWTH THERMAL TREATMENT; SELF ASSEMBLED QUANTUM DOTS; STRAIN DRIVEN PHASE SEPARATION; THERMAL ANNEALING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34547759230     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2007.04.014     Document Type: Article

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