Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 81-84

  Rodriguez, Philippe ^a   Auvray, Laurent ^a   Dumont, Hervé ^a   Dazord, Jacques ^a   Monteil, Yves ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

Author keywords

A3. Metalorganic vapour phase epitaxy; B1. BGaAs; B1. BInGaAs; B2. Semiconducting III V materials

Indexed keywords

CONCENTRATION (PROCESS); PHOTOLUMINESCENCE; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

BINGAAS ALLOYS; GAS-PHASE CONCENTRATION; QUANTUM WELL EMISSION;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 33846462086     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.118     Document Type: Article

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