Photoluminescence and structural properties of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy under different arsenic pressures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 32, Issue 1-2 SPEC. ISS., 2006, Pages 266-269

  Hakkarainen, T ^a   Pavelescu, E M ^b   Likonen, J ^c  

^a AALTO UNIVERSITY   (Finland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

^c VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

A1. Photoluminescence; A3. Molecular beam epitaxy; A3. Quantum wells; B1. Dilute nitride alloys

Indexed keywords

MOLECULAR BEAM EPITAXY; NEGATIVE IONS; NITRIDES; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION;

ALLOY COMPOSITION; B1. DILUTE NITRIDE ALLOYS; GAINNAS/GAAS QUANTUM WELLS; NITROGEN STICKING COEFFICIENT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33646174889     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2005.12.050     Document Type: Article

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