Surface segregation of boron in BxGa1-xAs/GaAs epilayers studied by x-ray photoelectron spectroscopy and atomic force microscopy

Applied Physics Letters

Volumn 82, Issue 12, 2003, Pages 1830-1832

  Dumont, H ^a   Rutzinger, D ^a   Vincent, C ^a   Dazord, J ^a   Monteil, Y ^a   Alexandre, F ^b   Gentner, J L ^b  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; MORPHOLOGY; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SINGLE CRYSTALS; SUPERSATURATION; SURFACE ROUGHNESS; SURFACE STRUCTURE; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SURFACE SEGREGATION;

BORON;

EID: 0037464190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1561164     Document Type: Article

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