Investigation of substrate bias effects on the reactively sputtered ZrN diffusion barrier films

Ceramics International

Volumn 35, Issue 5, 2009, Pages 1999-2005

  Ruan, Jian Long ^a   Lii, Ding Fwu ^b   Chen, J S ^a   Huang, Jow Lay ^a,c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c KUN SHAN UNIVERSITY   (Taiwan)

Author keywords

A. Films; C. Electrical properties; D. Nitrides; Diffusion barrier

Indexed keywords

A. FILMS; C. ELECTRICAL PROPERTIES; D. NITRIDES; DC REACTIVE MAGNETRON SPUTTERING; DIFFUSION BARRIER FILMS; DIFFUSION BARRIER LAYERS; DIFFUSION BARRIER PROPERTIES; ELECTRICAL RESISTIVITIES; ELECTRON-PROBE MICROANALYZER; FILM SURFACES; FOUR-POINT PROBE METHODS; HIGH TEMPERATURES; ION IRRADIATIONS; NEGATIVE SUBSTRATES; OXYGEN CONTENTS; PREFERRED ORIENTATIONS; RE-SPUTTERING; SUBSTRATE BIAS; SUBSTRATE BIAS EFFECTS; SURFACE ENERGIES; X- RAY DIFFRACTIONS; ZR N FILMS;

AUGER ELECTRON SPECTROSCOPY; COPPER; DIFFUSION BARRIERS; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ION BOMBARDMENT; IONS; NITRIDES; OXYGEN; PROBES; SILICON COMPOUNDS; SURFACE CHEMISTRY; SURFACE TENSION;

SUBSTRATES;

EID: 67349163860     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2008.11.002     Document Type: Article

References (35)

1. Nitta T., Ohmi T., Hoshi T., Sakai S., Sakaibara K., Imai S., and Shibata T. Evaluating the large electromigration resistance of copper interconnects employing a newly developed accelerated life-test method. J. Electrochem. Soc. 140 4 (1993) 1131-1137
2. 2/Si multilayer structures. J. Mater. Res. 12 12 (1997) 3367-3372
3. Cho S., Lee K., Song P., Jeon H., and Kim Y. Barrier characteristics of ZrN films deposited by remote plasma-enhanced atomic layer deposition using tetrakis(diethylamino)zirconium precursor. Jpn. J. Appl. Phys. 46 7A (2007) 4085-4088
4. Bae N.-J., Na K.-I., Cho H.-I., Park K.-Y., Boo S.-E., Bae J.-H., and Lee J.-H. Thermal and electrical properties of 5-nm-thick TaN film prepared by atomic layer deposition using a pentakis(ethylmethylamino)tantalum precursor for copper metallization. Jpn. J. Appl. Phys. 45 12 (2006) 9072-9074
5. 2 across different barrier layers. Appl. Phys. Lett. 57 6 (1990) 617-619
6. Wang S.Q. Barriers against copper diffusion into silicon and drift through silicon dioxide. Mater. Res. Soc. Bull. 19 8 (1994) 30-40
7. Massalski T.B. Binary Phase Diagram (1990), American Society for Metals, Westerville, OH
8. Gromov D.G., Mochalov A.I., Klimovitskiy A.G., Sulimin A.D., and Redichev E.N. Approaches to diffusion barrier creation and trench filling for copper interconnection formation. Appl. Phys. A 81 7 (2005) 1337-1343
9. Yoshimoto K., Kaiya F., Shinkai S., Sasaki K., and Yanagisawa H. Preparation of single-oriented (1 1 1)VN film with low-resistivity and its application as diffusion barrier between Cu and Si. Jpn. J. Appl. Phys. 45 1A (2006) 215-220
10. 2. J. Vac. Sci. Technol. B 22 5 (2004) 2542-2547
11. Takeyama M.B., Noya A., and Sakanishi K. Diffusion barrier properties of ZrN films in the Cu/Si contact systems. J. Vac. Sci. Technol. B 18 3 (2000) 1333-1337
12. Pierson H.O. Handbook of Refractory Carbides and Nitrides: Properties, Characteristics, Processing, and Applications (1996), Noyes Publications, New Jersey
13. Sato M., Takeyama M.B., Aoyagi E., and Noya A. Application of extremely thin ZrN film as diffusion barrier between Cu and SiOC. Jpn. J. Appl. Phys. 47 1 (2008) 620-624
14. Lee M.K., and Kang H.S. Characteristics of TiN film deposited on stellite using reactive magnetron sputter ion plating. J. Mater. Res. 12 9 (1997) 2393-2400
15. Robinson K.S., and Sherwood P.M.A. X-ray photoelectron spectroscopic studies of the surface of sputter ion plated films. Surf. Interface Anal. 6 6 (1984) 261-266
16. Ohring M. The Materials Science of Thin Films (1992), Academic Press, San Diego p. 131
17. x thin films by reactive DC magnetron sputtering. Thin Solid Films 444 (2003) 111-119
18. 2 hard coatings by means of X-ray diffractometry and Auger electron spectroscopy. Mater. Sci. Eng. A 139 (1991) 259-263
19. Pelleg J., Zevin L.Z., and Lungo S. Reactive-sputter-deposited TiN films on glass substrates. Thin Solid Films 197 (1991) 117-128
20. Oh U.C., and Je J.H. Effects of strain energy on the preferred orientation of TiN thin films. J. Appl. Phys. 74 3 (1993) 1692-1696
21. Ensinger W. Growth of thin films with preferential crystallographic orientation by ion bombardment during deposition. Surf. Coat. Technol. 65 (1994) 90-105
22. Marinov M. Thin Solid Films 46 (1977) 5267
23. y composite films. J. Mater. Res. 18 8 (2003) 1985-1990
24. Klug H.P., and Alexander L.E. X-Ray Diffraction Procedures (1974), Wiley, New York
25. 0.5N alloys grown by D.C. magnetron sputter deposition. Thin Solid Films 153 (1987) 55-65
26. Cavaleiro A., Vieira M.T., and Lemperiere G. Influence of deposition conditions on the morphology of sputtered W-C-(Co) films. Thin Solid Films 213 (1992) 6-12
27. Bland R.D., Kominiak G.J., and Mattox D.M. Effect of ion bombardment during deposition on thick metal and ceramic deposits. J. Vac. Sci. Technol. 11 4 (1974) 671-674
28. Ohring M. The Materials Science of Thin Films (1992), Academic Press, San Diego p. 456
29. x thin films. J. Vac. Sci. Technol. A 22 5 (2004) 2145-2151
30. Huang J.H., Hsu C.Y., Chen S.S., and Yu G.P. Effect of substrate bias on the structure and properties of ion-plated ZrN on Si and stainless steel substrates. Mater. Chem. Phys. 77 (2002) 14-21
31. Park K.C., and Kim K.B. The effect of density and microstructure on the performance of TiN barrier films in Cu metallization. J. Appl. Phys. 80 10 (1996) 5674-5681
32. x films between Cu and Si. Mater. Chem. Phys. 85 (2004) 444-449
33. Lim J.W., Mimura K., and Isshiki M. Suppression of Cu agglomeration in the Cu/Ta/Si structure by capping layer. Sci. Technol. Adv. Mater. 4 (2003) 391-396
34. 2 structure. J. Electrochem. Soc. 151 11 (2004) G746-G750
35. Park K.C., Kim S.H., and Kim K.B. Effect of ion bombardment during chemical vapor deposition of TiN films. J. Electrochem. Soc. 147 7 (2000) 2711-2717