Approaches to diffusion barrier creation and trench filling for copper interconnection formation

Applied Physics A: Materials Science and Processing

Volumn 81, Issue 7, 2005, Pages 1337-1343

  Gromov, D G ^a   Mochalov, A I ^a   Klimovitskiy, A G ^a   Sulimin, A D ^a   Redichev, E N ^a  

^a NATIONAL RESEARCH UNIVERSITY OF ELECTRONIC TECHNOLOGY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION; FILLING; MELTING; OPTIMIZATION; TANTALUM ALLOYS; THERMAL EFFECTS; THIN FILMS; TRENCHING;

BARRIER CREATION; BARRIER MATERIAL; MELTING TEMPERATURE; TRENCH FILLING;

COPPER;

EID: 24944531760     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s00339-005-3259-4     Document Type: Article

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