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Japanese Journal of Applied Physics

Volumn 47, Issue 1 PART 2, 2008, Pages 620-624

Application of extremely thin ZrN film as diffusion barrier between Cu and SiOC

(4) Sato, Masaru a Takeyama, Mayumi B a Aoyagi, Eiji b Noya, Atsushi a

a KITAMI INSTITUTE OF TECHNOLOGY (Japan)

b TOHOKU UNIVERSITY (Japan)

Author keywords

Diffusion barrier; Interconnecting line; Interface layer; Nanocrystalline; ZrN

Indexed keywords

ANNEALING; DIFFUSION; DIFFUSION BARRIERS; MICROSCOPIC EXAMINATION; MOS DEVICES; OPTICAL INTERCONNECTS; PHASE INTERFACES; SEMICONDUCTOR DOPING;

45NM TECHNOLOGIES; BARRIER MATERIALS; BARRIER PROPERTIES; CU INTERCONNECTS; HIGH-PERFORMANCE; INTERCONNECTING LINE; INTERFACE LAYER; INTERFACE LAYERS; NANOCRYSTALLINE; PHASE REACTIONS; THIN BARRIERS; ZRN; ZRN FILMS;

COPPER;

EID: 53349093475 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.47.620 Document Type: Article

Times cited : (12)

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