Preparation of single-oriented (111)VN film with low-resistivity and its application as diffusion barrier between Cu and Si

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 1 A, 2006, Pages 215-220

  Yoshimoto, Ken Ichi ^a   Kaiya, Fumihiro ^a   Shinkai, Satoko ^b   Sasaki, Katsutaka ^c   Yanagisawa, Hideto ^c  

^a ASAHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE OF TECHNOLOGY   (Japan)

^c KITAMI INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Cu metallization; Diffusion barrier; Low resistivity (111)VN film; LSI contact structure; Metal semiconductor interface; Single oriented growth

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COPPER; CRYSTAL ORIENTATION; STOICHIOMETRY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

CU METALLIZATION; LSI CONTACT STRUCTURE; METAL/SEMICONDUCTOR INTERFACE; SINGLE-ORIENTED GROWTH;

THIN FILMS;

EID: 31544468920     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.215     Document Type: Article

References (24)

1. M. Datta: IBM J. Res. Dev. 42 (1998) September Issue.
2. A. Cros, M. O. Aboelfotoh and K. N. Tu: J. Appl. Phys. 67 (1990) 3328.
3. L. Stolt and F. M. D'heurle: Thin Solid Films 189 (1990) 269.
4. K. Yoshimoto, K. Sasaki, H. Yanagisawa and A. Noya: Trans. IEICE Electron. J79-C-II (1996) 57 [in Japanese].
5. K. Yoshimoto, H. Yanagisawa and K. Sasaki: Jpn. J. Appl. Phys. 36 (1997) 7302.
6. K. Yoshimoto, S. Shinkai and K. Sasaki: Jpn. J. Appl. Phys. 39 (2000) 1835.
7. H. Yanagisawa, S. Shinkai, K. Sasaki, Y. Abe, A. Sakai and S. Zaima: Jpn. J. Appl. Phys. 44 (2005) 343.
8. K.-H. Min, K.-C. Chun and K.-B. Kim: J. Vac. Sci. Technol. B 14 (1996) 3263.
9. M. Takeyama, A. Noya, T. Sase, A. Ohta and K. Sasaki: J. Vac. Sci. Technol. B 14 (1996) 674.
10. International Technology Roadmap for Semiconductors 2003 Edition (Semiconductor Industry Association, 2003) Chapter on Interconnect, p. 394.
11. H. O. Pierson: Handbook of Refractory Carbides and Nitrides (Noyes Publications, Westwood, 1996) p. 187.
12. S. Zaima and Y. Yasuda: Oyo Buturi 63 (1994) 1093 [in Japanese].
13. C.-S. Chen, C.-P. Liu, H.-G. Yang and C. Y. A. Tsao: J. Vac. Sci. Technol. B 22 (2004) 1075.
14. C.-P. Liu and H.-G. Yang: Thin Solid Films 444 (2003) 111.
15. M. Y. Liao, Y. Gotoh, H. Tsuji and J. Ishikawa: J. Vac. Sci. Technol. A 22 (2004) 146.
16. G. Abadias and Y. Y. Tse: J. Appl. Phys. 95 (2004) 2414.
17. M. B. Takeyama, T. Itoi, K. Satoh, M. Sakagami and A. Noya: J. Vac. Sci. Technol. B 22 (2004) 2542.
18. H. Okamoto, P. R. Subramanian and L. Kacprzak: in Binary Alloy Phase Diagrams, ed. T. B. Massalski (ASM International, OH, 1990) 2nd ed.
19. H. Yanagisawa, K. Sasaki, Y. Abe, M. Kawamura and S. Shinkai: Jpn. J. Appl. Phys. 37 (1998) 5714.
20. S. Shinkai and K. Sasaki: Jpn. J. Appl. Phys. 38 (1999) 2097.
21. M. Kawamura, Y. Abe, H. Yanagisawa and K. Sasaki: Thin Solid Films 287 (1996) 115.
22. J. Zasadzinski, R. Vaglio, G. Rubino, K. E. Gray and M. Russo: Phys. Rev. B 32 (1985) 2929.
23. A. Zalar: Thin Solid Films 124 (1985) 223.
24. J. H. Lin and L. J. Chen: J. Appl. Phys. 77 (1995) 4425.