In-depth investigation of the mechanisms impacting C-V/G-V characteristics of Ge/GeON/HfO2/TiN stacks by electrical modeling

Microelectronic Engineering

Volumn 84, Issue 9-10, 2007, Pages 2320-2323

  Batude, P ^a   Garros, X ^a   Clavelier, L ^a   Le Royer, C ^a   Hartmann, J M ^a   Loup, V ^a   Besson, P ^a   Vandroux, L ^a   Deleonibus, S ^a   Boulanger, F ^a  

^a CEA LETI   (France)

Author keywords

Germanium; Interface state; Minority carriers; MOSFET

Indexed keywords

GERMANIUM COMPOUNDS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MOSFET DEVICES; TITANIUM NITRIDE;

CARRIER RESPONSE; INTERFACE STATE; MINORITY CARRIERS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 34248654084     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2007.04.066     Document Type: Article

References (4)

1. A. Abbadie, J.M. Hartman, N. Cherkashin, C. Deguet, L. Sa nchez, F. Brunier, F. Letertre, Proc. ECS 2007.
2. C. Le Royer, X. Garros, C. Tabone, L. Clavelier, Y. Morand, J.-M. Hartmann, Y. Campidelli, O. Kermarrec, V. Loup, E. Martinez, O. Renault, B. Guigues, V. Cosnier, S. Deleonibus, ESSDERC 2005, p. 97.
3. Dimoulas A., Vellianitis G., Mavrou G., Evangelou E.K., Argyropoulos K., and Houssa M. Microelec. Eng. 80 (2005) 34-37
4. Nicollian and Brews, MOS Physics and Technology (Wiley, New York 1982).