Effects of annealing process and Mn substitution on structure and ferroelectric properties of BiFeO3 films

Thin Solid Films

Volumn 517, Issue 16, 2009, Pages 4497-4501

  Wen, Zheng ^a   Hu, Guangda ^a   Fan, Suhua ^b   Yang, Changhong ^a   Wu, Weibing ^a   Zhou, Ying ^a   Chen, Xuemei ^a   Cui, Shougang ^a  

^a UNIVERSITY OF JINAN   (China)

^b SHANDONG JIANZHU UNIVERSITY   (China)

Author keywords

Defect complexes; Ferroelectric properties; Metal organic decomposition; Mn doped BiFeO3

Indexed keywords

ANNEALING PROCESS; CONVENTIONAL METHODS; CRYSTALLINITY; DEFECT COMPLEXES; DOMINANT FACTORS; FERROELECTRIC PROPERTIES; LEAKAGE MEASUREMENTS; METAL ORGANIC DECOMPOSITION; METAL-ORGANIC DECOMPOSITION METHODS; MN SUBSTITUTIONS; MN-DOPED BIFEO3; MN-DOPING; REMANENT POLARIZATIONS;

ANNEALING; DECOMPOSITION; DEFECTS; DOPING (ADDITIVES); FERROELECTRICITY; MANGANESE COMPOUNDS; ORGANOMETALLICS; OXYGEN; OXYGEN VACANCIES; SEMICONDUCTING BISMUTH COMPOUNDS; THIN FILMS; TIN; TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

MANGANESE;

EID: 67349116515     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.12.026     Document Type: Article

References (26)

1. Wang J., Neaton J.B., Zheng H., Nagarajan V., Ogale S.B., Liu B., Viehland D., Vaithyanathan V., Schlom D.G., Waghmare U.V., Spaldin N.A., Rabe K.M., Wuttig M., and Ramesh R. Science 299 (2003) 1719
2. Ramesh R., and Spaldin N.A. Nat. Mater. 6 (2007) 21
3. Zhao T., Scholl A., Zavaliche F., Lee K., Barry M., Doran A., Cruz M.P., Chu Y.H., Ederer C., Spaldin N.A., Das R.R., Kim D.M., Baek S.H., Eom C.B., and Ramesh R. Nat. Mater. 5 (2006) 823
4. Yun K.Y., Ricinschi D., Kanashima T., and Okuyama M. Appl. Phys. Lett. 89 (2006) 192902
5. Li J., Wang J., Wuttig M., Ramesh R., Wang N., Ruette B., Pyatakov A.P., Zvezdin A.K., and Viehland D. Appl. Phys. Lett. 84 (2004) 5261
6. Wang J., Zheng H., Ma Z., Prasertchoung S., Wuttig M., Droopad R., Yu J., Eisenbeiser K., and Ramesh R. Appl. Phys. Lett. 85 (2004) 2574
7. Yun K.Y., Noda M., and Okuyama M. Appl. Phys. Lett. 83 (2003) 3981
8. Dho J., Qi X., Kim H., MacManus-Driscoll J.L., and Blamire M.G. Adv. Mater. (Weinheim, Ger.) 18 (2006) 1445
9. Yang S.Y., Zavaliche F., Mohaddes-Ardabili L., Vaithyanathan V., Schlom D.G., Lee Y.J., Chu Y.H., Cruz M.P., Zhan Q., Zhao T., and Ramesh R. Appl. Phys. Lett. 87 (2005) 102903
10. Tian W., Vaithyanathan V., Schlom D.G., Zhan Q., Yang S.Y., Chu Y.H., and Ramesh R. Appl. Phys. Lett. 90 (2007) 172908
11. Das R.R., Kim D.M., Baek S.H., Eom C.B., Zavaliche F., Yang S.Y., Ramesh R., Chen Y.B., Pan X.Q., Ke X., Rzchowski M.S., and Streiffer S.K. Appl. Phys. Lett. 88 (2006) 242904
12. Zheng R.Y., Gao X.S., Zhou Z.H., and Wang J. J. Appl. Phys. 101 (2007) 054104
13. Singh S.K., Kim Y.K., Funakubo H., and Ishiwara H. Appl. Phys. Lett. 88 (2006) 162904
14. Simões A.Z., Gonzalez A.H.M., Cavalcante L.S., Riccardi C.S., Longo E., and Varela J.A. J. Appl. Phys. 101 (2007) 074108
15. Liu Z., Liu H., Du G., Zhang J., and Yao K. J. Appl. Phys. 100 (2006) 044110
16. Naganuma H., and Okamura S. J. Appl. Phys. 101 (2007) 09 M103
17. Singh S.K., Ishiwara H., and Maruyama K. Appl. Phys. Lett. 88 (2006) 262908
18. Kim J.K., Kim S.S., Kim W., Bhalla A.S., and Guo R. Appl. Phys. Lett. 88 (2006) 132901
19. Hu G.D., Cheng X., Wu W.B., and Yang C.H. Appl. Phys. Lett. 91 (2007) 232909
20. Singh S.K., Ishiwara H., Sato K., and Maruyama K. J. Appl. Phys. 102 (2007) 094109
21. Uchida H., Ueno R., Funakubo H., and Koda S. J. Appl. Phys. 100 (2006) 014106
22. Sosnowska I., Przenioslo R., Fischer P., and Murashov V.A. J. Magn. Magn. Mater. 160 (1996) 384
23. Hu G.D., Wilson I.H., Xu J.B., Cheung W.Y., Wong S.P., and Wong H.K. Appl. Phys. Lett. 74 (1999) 1221
24. Chen X., Hu G., Yan J., Wang X., Yang C., and Wu W. J. Phys. D: Appl. Phys. 41 (2008) 225402
25. Hu G.D., Fan S.H., Yang C.H., and Wu W.B. Appl. Phys. Lett. 92 (2008) 192905
26. Zhang L., and Ren X. Phys. Rev. B 73 (2006) 094121