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Journal of Applied Physics

Volumn 105, Issue 9, 2009, Pages

Agglomeration process in thin silicon-, strained silicon-, and silicon germanium-on-insulator substrates

(6) Capellini, G a Ciasca, G a De Seta, M a Notargiacomo, A a Evangelisti, F a Nardone, M b

a ROMA TRE UNIVERSITY (Italy)

b CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; DE-WETTING; ENERGY-DRIVEN; INSULATOR LAYER; MAIN PARAMETERS; SEMICONDUCTOR LAYERS; SILICON GERMANIUM; SILICON GERMANIUM-ON-INSULATOR SUBSTRATES; SILICON-ON-INSULATOR; STRAINED SILICON; STRAINED-SOI; THERMAL-ANNEALING; THIN LAYERS; VOID FORMATION;

AGGLOMERATION; BICMOS TECHNOLOGY; GERMANIUM; MOSFET DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; VACUUM;

SUBSTRATES;

EID: 67249156213 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3117837 Document Type: Article

Times cited : (20)

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