Capacitance-voltage study of silicon-on-insulator structure with an ultrathin buried SiO2 layer fabricated by wafer bonding

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 38, Issue 7 B, 1999, Pages

  Ishikawa, Yasuhiko ^a   Makita, Shigenori ^a   Zhang, Jianhua ^a   Tsuchiya, Toshiaki ^a   Tabe, Michiharu ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; CAPACITANCE MEASUREMENT; CHARGE CARRIERS; ELECTRON TUNNELING; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICA; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; VOLTAGE MEASUREMENT;

CAPACITANCE-VOLTAGE CHARACTERISTICS; WAFER BONDING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0032664165     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.l789     Document Type: Article

References (0)