Mechanisms of thermally induced dewetting of ultrathin silicon-on-insulator

Applied Physics Letters

Volumn 88, Issue 14, 2006, Pages

  Sutter, P ^a   Ernst, W ^a,b   Choi, Y S ^a   Sutter, E ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b Department of Geology and Geological Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHIC STRUCTURE; DEWETTING; MASS TRANSPORT;

ANNEALING; CRYSTAL STRUCTURE; CRYSTALLOGRAPHY; MASS TRANSFER; ULTRATHIN FILMS; WETTING;

SILICON ON INSULATOR TECHNOLOGY;

EID: 33646711693     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2186741     Document Type: Article

References (15)

1. D. J. Srolovitz and S. A. Safran, J. Appl. Phys. 60, 247 (1986).
2. E. Jiran and C. V. Thompson, J. Electron. Mater. 19, 1153 (1990).
3. X. Hu, D. G. Cahill, and R. S. Averback, Appl. Phys. Lett. 76, 3125 (2000).
4. K. Thürmer, E. D. Williams, and J. E. Reutt-Robey, Phys. Rev. B 68, 155423 (2003).
5. J.-Y. Kwon, T.-S. Yoon, K.-B. Kim, and S.-H. Min, J. Appl. Phys. 93, 3270 (2003).
6. S. Herminghaus, K. Jacobs, K. Mecke, J. Bischof, A. Fery, M. Ibn-Elhaj, and S. Schlagowski, Science 282, 916 (1998).
7. R. Xie, A. Karim, J. F. Douglas, C. C. Han, and R. A. Weiss, Phys. Rev. Lett. 81, 1251 (1998).
8. B. Legrand, V. Agache, J. P. Nys, V. Senez, and D. Stievenard, Appl. Phys. Lett. 76, 3271 (2000).
9. M. Tabe, M. Kumezawa, T. Yamamoto, S. Makita, T. Yamaguchi, and Y. Ishikawa, Appl. Surf. Sci. 142, 11 (1999).
10. Y. Ishikawa, Y. Imai, H. Ikeda, and M. Tabe, Appl. Phys. Lett. 83, 3162 (2003).
11. R. Nuryadi, Y. Ishikawa, Y. Ono, and M. Tabe, J. Vac. Sci. Technol. B 20, 167 (2002).
12. P. Sutter, W. Ernst, and E. Sutter, Appl. Phys. Lett. 85, 3148 (2004).
13. E. Sutter, P. Sutter, P. Zahl, P. Rugheimer, and M. G. Lagally, Surf. Sci. 532-535, 785 (2003).
14. Lord Rayleigh, Proc. London Math. Soc. 10, 4 (1878).
15. G. G. Shahidi, IBM J. Res. Dev. 46, 121 (2002).