Spectral analysis of 1.55-μm InAs-InP(113)B quantum-dot lasers based on a multipopulation rate equations model

IEEE Journal of Quantum Electronics

Volumn 45, Issue 7, 2009, Pages 872-878

  Grillot, Frédéric ^a,b   Veselinov, Kiril ^b   Gioannini, Mariangela ^c   Montrosset, Ivo ^c   Even, Jacky ^b   Piron, Rozenn ^b   Homeyer, Estelle ^d   Loualiche, Slimane ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b UNIVERSITÉ DE RENNES 1   (France)

^c POLITECNICO DI TORINO   (Italy)

^d UNIVERSITÉ LYON 1   (France)

Author keywords

Quantum dot (QD); Rate equation; Semiconductor laser

Indexed keywords

EXCITED STATES; GALLIUM ARSENIDE; GROUND STATE; III-V SEMICONDUCTORS; INDIUM ARSENIDE; INDIUM PHOSPHIDE; NANOCRYSTALS; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM DOTS; SPECTRUM ANALYSIS; TEMPERATURE DISTRIBUTION;

CONTINUOUS TRANSITIONS; INHOMOGENEOUS BROADENING; LASING WAVELENGTH; RATE EQUATIONS; RATE EQUATIONS MODEL; SPECTRAL BEHAVIORS; TEMPERATURE DEPENDENCE; THEORETICAL MODELING;

QUANTUM DOT LASERS;

EID: 67249099037     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2009.2013174     Document Type: Article

References (24)

1. 0.85As quantum well," Electron. Lett., vol. 35, no. 14, pp. 1163-1165, 1999.
2. S. S. Mikhrin, A. R. Kovsh, I. L. Krestnikov, A. V. Kozhukhov, D. A. Livshits, N. N. Ledentsov, Yu. M. Shernyakov, I. I. Novikov, M. V. Maximov, V. M. Ustinov, and Zh. I. Alferov, "High power temperature-insensitive 1.3 μm InAs/InGaAs/GaAs quantum dot lasers," Semicond. Sci. Technol., vol. 20, pp. 340-342, 2005.
3. H. Saito, K. Nishi, A. Kamei, and S. Sugou, "Low chirp observed in directly modulated quantum dot lasers," IEEE Photon. Technol. Lett. vol. 12, no. 10, pp. 1298-1300, Oct. 2000.
4. D. O'Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukov, S. S. Mikhrin, and A. R. Kovsh, "Feedback sensitivity of 1.3 μm InAs/GaAs quantum dot lasers," Electron. Lett., vol. 39, no. 25, pp. 1819-1820, 2003.
5. M. Grundmann, O. Stier, S. Bognar, C. Ribbat, F. Heinrichsdorff, and D. Bimberg, "Optical properties of self-organized quantum dots: Modelling and experiments," Phys. Status Solidi A, vol. 178, pp. 255-262, 2000.
6. H. Hatori, M. Sugawara, K. Mukai, Y. Nakata, and H. Ishikawa, "Room-temperature gain and differential gain characteristics of self-assembled InGaAs/GaAs quantum dots for 1.1-1.3 μm semiconductor laser," Appl. Phys. Lett., vol. 77, no. 6, pp. 773-775, 2000.
7. L. Ya. Karachinsky, T. Kettler, N. Yu. Gordeev, I. I. Novikov, M. V. Maximov, Yu. M. Shernyakov, N. V. Kryzhanovskaya, A. E. Zhukov, E. S. Semenova, A. P. Vasil'ev, V. M. Ustinov, N. N. Ledentsov, A. R. Kovsh, V. A. Shchukin, S. S. Mikhrin, A. Lochmann, O. Schulz, L. Reissmann, and D. Bimberg, "High-power singlemode CW operation of 1.5 μm range quantum dot GaAs-based laser," Electron. Lett., vol. 41, no. 8, pp. 478-480, 2005.
8. P. Caroff, C. Paranthoën, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. Le Corre, and S. Loualiche, "High gain and low threshold InAs quantum dot lasers on InP," Appl. Phys. Lett., vol. 87, pp. 243107-1-243107-3, 2005.
9. C. Platz, C. Paranthoen, P. Caroff, N. Bertru, C. Labbe, J. Even, O. Dehaese, H. Folliot, A. Le Corre, S. Loualiche, G. Moreau, J. C. Simon, and A. Ramdane, "Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection," Semicond. Sci. Technol. vol. 20, pp. 459-463, 2005.
10. M. Sugawara, N. Hatori, H. Ebe, Y. Arakawa, T. Akiyama, K. Otsubo, and Y. Nakata, "Modelling room-temperature lasing spectra of 1.3 μm selfassembled InAs/GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection," J. Appl. Phys., vol. 97, pp. 043523-1-043523-8, 2005.
11. A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Lett., vol. 82, no. 12, pp. 1818-1820, 2003.
12. A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. Provost, C. Paranthoën, and A. Fiore, "Impact of intraband relaxation on the performance of a quantum-dot laser," IEEE J. Sel. Topics Quantum Electron., vol. 9, no. 5, pp. 1308-1314, Sep./Oct. 2003.
13. M. Gioannini, A. Sevega, and I. Montrosset, "Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers," Opt. Quantum Electron., vol. 38, pp. 381-394, 2006.
14. E. A. Viktorov, P. Mandel, Y. Tanguy, J. Houlihan, and G. Huyet, "Electron-hole asymmetry and two-state lasing in quantum dot lasers," Appl. Phys. Lett., vol. 87, pp. 053113-1-053113-3, 2005.
15. K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini, and S. Loualiche, "Analysis of the double laser emission occurring in 1.55 μm InAs-InP(1 1 3)B quantum-dot lasers," IEEE J. Quantum Electron., vol. 43, no. 9, pp. 810-816, Sep. 2007.
16. B. Dagens, O. Bertran-Pardo, M. Fischer, F. Gerschutz, J. Koeth, I. Krestnikov, A. Kovsh, O. Le Gouezigou, and D. Make, "Uncooled directly modulated quantum dot laser 10 Gb/s transmission at 1.3 μm, with constant operation parameters," presented at the Eur. Conf. Opt. Commun., Cannes, France, 2006, Th. 4.5.7.
17. F. Gershutz, M. Fischer, J. Koeth, M. Chacinski, R. Schatz, O. Kjebon, A. Kovsh, I. Krestinkov, and A. Forschel, "Temperature insensitive 1.3/spl mu/InGaAs=GaAs quantum dot distributed feedback lasers for 10 Gbit=s transmission over 21 km," Electron. Lett., vol. 42, no. 25, pp. 1457-1458, 2006.
18. P. Miska, C. Paranthoen, J. Even, O. Dehaese, H. Folliot, N. Bertru, S. Loualiche, M. Senes, and X. Marie, "Optical spectroscopy and modelling of double-cap grown InAs/InP quantum dots with long wavelength emission," Semicond. Sci. Technol., vol. 17, pp. L63-L67, 2002.
19. 1-xAs/GaAs quantum dots," Phys. Rev. B, vol. 54, no. 16, pp. 11532-11538, 1996.
20. T. Berg, S. Bischoff, I. Magnusdottir, and J. Mork, "Ultrafast gain recovery and modulation limitations in self-assembled quantum-dot devices," IEEE Photon. Technol. Lett., vol. 13, no. 6, pp. 541-543, Jun. 2001.
21. 1-xAs/GaAs quantum dot lasers," Phys. Rev. B., vol. 61, no. 11, pp. 7595-7603, 2000.
22. D. Zhou, R. Piron, F. Grillot, O. Dehaese, E. Homeyer, M. Dontabactouny, T. Batte, K. Tavernier, J. Even, and S. Loualiche, "Study of the characteristics of 1.55 μm quantum dash/dot semiconductor lasers on InP substrate," Appl. Phys. Lett., vol. 93, pp. 161104-1-161104-3, 2008.
23. A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, Yu. M. Shernyakov, S. S. Mikhrin, N. A. Maleev, E. Yu. Kondrat'eva, D. A. Livshits, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Yu. G. Musikhin, N. N. Ledentsov, P. S. Kop'ev, Z. I. Alferov, and D. Bimberg, "Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate," IEEE Photon. Technol. Lett., vol. 11, no. 11, pp. 1345-1347, Nov. 1999.
24. A. Martinez, K. Merghem, S. Bouchoule, G. Moreau, A. Ramdane, J.-G. Provost, F. Alexandre, F. Grillot, O. Dehaese, R. Piron, and S. Loualiche, "Dynamic properties of InAs/InP(311B) quantum dot Fabry-Perot lasers emitting at 1.52-μm," Appl. Phys. Lett., vol. 93, pp. 021101-1-021101-3, 2008.