-
1
-
-
0032689040
-
-
G. T. Liu, A. Stintz, H. Li, K. J. Malloy, and L. F. Lester, Electron. Lett., vol.35, pp. 1163-1165, 1999.
-
(1999)
Electron. Lett.
, vol.35
, pp. 1163-1165
-
-
Liu, G.T.1
Stintz, A.2
Li, H.3
Malloy, K.J.4
Lester, L.F.5
-
2
-
-
24144498705
-
-
S. S. Mikhrin, A. R. Kovsh, I. L. Krestnikov, A. V. Kozhukhov, D. A. Livshits, N. N. Ledentsov, Y. M. Shernyakov, I.I. Novikov, M. V. Maximov, V. M. Ustinov, and Z. I. Alferov, Semicond. Sci. Technol., vol.20, p. 340, 2005.
-
(2005)
Semicond. Sci. Technol.
, vol.20
, pp. 340
-
-
Mikhrin, S.S.1
Kovsh, A.R.2
Krestnikov, I.L.3
Kozhukhov, A.V.4
Livshits, D.A.5
Ledentsov, N.N.6
Shernyakov, Y.M.7
Novikov, I.I.8
Maximov, M.V.9
Ustinov, V.M.10
Alferov, Z.I.11
-
3
-
-
0000604247
-
-
Oct.
-
H. Saito, K. Nishi, A. Kamei, and S. Sugou, IEEE Photon. Technol. Lett., vol.12, no.10, pp. 1298-1300, Oct. 2000.
-
(2000)
IEEE Photon. Technol. Lett.
, vol.12
, Issue.10
, pp. 1298-1300
-
-
Saito, H.1
Nishi, K.2
Kamei, A.3
Sugou, S.4
-
4
-
-
0346392597
-
-
D. O'Brien, S. P. Hegarty, G. Huyet, J. G. McInerney, T. Kettler, M. Laemmlin, D. Bimberg, V. M. Ustinov, A. E. Zhukkov, S. S. Mikhrin, and A. R. Kovsh, Electron. Lett., vol.39, no.25, pp. .1819-1820, 2003.
-
(2003)
Electron. Lett.
, vol.39
, Issue.25
, pp. 1819-1820
-
-
O'Brien, D.1
Hegarty, S.P.2
Huyet, G.3
McInerney, J.G.4
Kettler, T.5
Laemmlin, M.6
Bimberg, D.7
Ustinov, V.M.8
Zhukkov, A.E.9
Mikhrin, S.S.10
Kovsh, A.R.11
-
5
-
-
0033730634
-
Optical properties of self-organized quantum dots: Modelling and experiments
-
M. Grundmann, O. Stier, S. Bognar, C. Ribbat, F. Heinrichsdorff, and D. Bimberg, "Optical properties of self-organized quantum dots: Modelling and experiments," Phys. Stat. Sol., vol.178, p. 255, 2000.
-
(2000)
Phys. Stat. Sol.
, vol.178
, pp. 255
-
-
Grundmann, M.1
Stier, O.2
Bognar, S.3
Ribbat, C.4
Heinrichsdorff, F.5
Bimberg, D.6
-
6
-
-
0000486313
-
Room-temperature gain and differential gain characteristics of self-assembled InGaAs-GaAs quantum dots for 1.1-1.3 μm semiconductor laser
-
Aug.
-
H. Hatori, M. Sugawara, K. Mukai, Y. Nakata, and H. Ishikawa, "Room-temperature gain and differential gain characteristics of self-assembled InGaAs-GaAs quantum dots for 1.1-1.3 μm semiconductor laser," Appl. Phys. Let., vol.77, no.6, pp. 773-775, Aug. 2000.
-
(2000)
Appl. Phys. Let.
, vol.77
, Issue.6
, pp. 773-775
-
-
Hatori, H.1
Sugawara, M.2
Mukai, K.3
Nakata, Y.4
Ishikawa, H.5
-
7
-
-
28844464361
-
High gain and low threshold InAs quantum dot lasers on InP
-
Dec.
-
P. Caroff, C. Paranthoën, C. Platz, O. Dehaese, H. Folliot, N. Bertru, C. Labbé, R. Piron, E. Homeyer, A. LeCorre, and S. Loualiche, "High gain and low threshold InAs quantum dot lasers on InP," Appl. Phys. Lett., vol.87, pp. 243107-243107-3, Dec. 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 2431070-2431073
-
-
Caroff, P.1
Paranthoën, C.2
Platz, C.3
Dehaese, O.4
Folliot, H.5
Bertru, N.6
Labbé, C.7
Piron, R.8
Homeyer, E.9
Lecorre, A.10
Loualiche, S.11
-
8
-
-
13744252314
-
Modelling room-temperature lasing spectra of 1.3 μm selfassembled InAs-GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection
-
Jan.
-
M. Sugawara, N. Hatori, H. Ebe, Y. Arakawa, T. Akiyama, K. Otsubo. and Y. Nakata, "Modelling room-temperature lasing spectra of 1.3 μm selfassembled InAs-GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection," J. Appl. Phys., vol.97, pp. 043523-043523-8, Jan. 2005.
-
(2005)
J. Appl. Phys.
, vol.97
, pp. 0435230-0435238
-
-
Sugawara, M.1
Hatori, N.2
Ebe, H.3
Arakawa, Y.4
Akiyama, T.5
Otsubo, K.6
Nakata, Y.7
-
9
-
-
0037464199
-
Simultaneous two-state lasing in quantum-dot lasers
-
A. Markus, J. X. Chen, C. Paranthoen, A. Fiore, C. Platz, and O. Gauthier-Lafaye, "Simultaneous two-state lasing in quantum-dot lasers," Appl. Phys. Let., vol.82, no.12, pp. 1818-1820, 2003.
-
(2003)
Appl. Phys. Let.
, vol.82
, Issue.12
, pp. 1818-1820
-
-
Markus, A.1
Chen, J.X.2
Paranthoen, C.3
Fiore, A.4
Platz, C.5
Gauthier-Lafaye, O.6
-
10
-
-
20344398540
-
Comparison of InAs quantum, dot lasers emitting at 1.55 μm under optical and electrical injection
-
C. Platz, C. Paranthoen, P. Caroff, N. Bertru, C. Labbe, J. Even, O. Dehaese, H. Folliot, A. Le Corre, S. Loualiche, G. Moreau, J. C. Simon, and A. Ramdane, "Comparison of InAs quantum, dot lasers emitting at 1.55 μm under optical and electrical injection," Semicond. Sci. Technol., vol.20, pp. 459-463, 2005.
-
(2005)
Semicond. Sci. Technol.
, vol.20
, pp. 459-463
-
-
Platz, C.1
Paranthoen, C.2
Caroff, P.3
Bertru, N.4
Labbe, C.5
Even, J.6
Dehaese, O.7
Folliot, H.8
Le Corre, A.9
Loualiche, S.10
Moreau, G.11
Simon, J.C.12
Ramdane, A.13
-
11
-
-
1342345988
-
Impact of intraband relaxation on the performance of a quantum-dot laser
-
Oct.
-
A. Markus, J. X. Chen, O. Gauthier-Lafaye, J. Provost, C. Paranthoën, and A. Fiore, "Impact of intraband relaxation on the performance of a quantum-dot laser," IEEE J. Sel. Topics Quantum Electron., vol.9, no.5, pp. 1308-1314, Oct. 2003.
-
(2003)
IEEE J. Sel. Topics Quantum Electron.
, vol.9
, Issue.5
, pp. 1308-1314
-
-
Markus, A.1
Chen, J.X.2
Gauthier-Lafaye, O.3
Provost, J.4
Paranthoën, C.5
Fiore, A.6
-
12
-
-
33646552681
-
Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers
-
M. Gioannini, A. Sevega, and I. Montrosset, "Simulations of differential gain and linewidth enhancement factor of quantum dot semiconductor lasers," Opt Quantum Electron., vol.38, pp. 381-394, 2006.
-
(2006)
Opt Quantum Electron.
, vol.38
, pp. 381-394
-
-
Gioannini, M.1
Sevega, A.2
Montrosset, I.3
-
13
-
-
33645507067
-
Electron-hole asymmetry and two-state lasing in quantum dot lasers
-
E. A. Viktorov, P. Mandel, Y. Tanguy, J. Houlihan, and G. Huyet, "Electron-hole asymmetry and two-state lasing in quantum dot lasers," Appl. Phys. Lett., vol.87, p. 053113, 2005.
-
(2005)
Appl. Phys. Lett.
, vol.87
, pp. 053113
-
-
Viktorov, E.A.1
Mandel, P.2
Tanguy, Y.3
Houlihan, J.4
Huyet, G.5
-
14
-
-
0033204524
-
1.3- μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA
-
Oct.
-
K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa, "1.3- μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA," IEEE Photon. Technol. Lett., vol.11, no.10, pp. 1205-1207, Oct. 1999.
-
(1999)
IEEE Photon. Technol. Lett.
, vol.11
, Issue.10
, pp. 1205-1207
-
-
Mukai, K.1
Nakata, Y.2
Otsubo, K.3
Sugawara, M.4
Yokoyama, N.5
Ishikawa, H.6
-
15
-
-
2442426112
-
High bit rate and elevated temperature data transmission using InGaAs quantum, -dot lasers
-
May
-
K. T. Tan, C. Marinelli, M. Thompson, A. Wonfor, M. Silver, R. Sellin, R. Penty, I. White, M. Lammlin, N. Ledentsov, D. Bimberg, A. Zhukov, V. Ustinov, and A. Kovsh, "High bit rate and elevated temperature data transmission using InGaAs quantum, -dot lasers," IEEE Photon. Technol. Lett., vol.16, no.5, pp. 1415-1417, May 2004.
-
(2004)
IEEE Photon. Technol. Lett.
, vol.16
, Issue.5
, pp. 1415-1417
-
-
Tan, K.T.1
Marinelli, C.2
Thompson, M.3
Wonfor, A.4
Silver, M.5
Sellin, R.6
Penty, R.7
White, I.8
Lammlin, M.9
Ledentsov, N.10
Bimberg, D.11
Zhukov, A.12
Ustinov, V.13
Kovsh, A.14
-
16
-
-
0036801522
-
Optical spectroscopy and modelling of double-cap grown InAs-InP quantum dots with long wavelength emission
-
P. Miska, C. Paranthoen, J. Even, O. Dehaese, H. Folliot, N. Bertru, S. Loualiche, M. Senes, and X. Marie, "Optical spectroscopy and modelling of double-cap grown InAs-InP quantum dots with long wavelength emission," Semicond Sci. Technol., vol.17, pp. L63-L67, 2002.
-
(2002)
Semicond Sci. Technol.
, vol.17
-
-
Miska, P.1
Paranthoen, C.2
Even, J.3
Dehaese, O.4
Folliot, H.5
Bertru, N.6
Loualiche, S.7
Senes, M.8
Marie, X.9
-
17
-
-
0001641998
-
1-xAs-GaAs quantum dots
-
Oct.
-
1-xAs-GaAs quantum dots," Phys. Rev. B, vol.54, no.16, pp. 11532-11538, Oct. 1996.
-
(1996)
Phys. Rev. B
, vol.54
, Issue.16
, pp. 11532-11538
-
-
Ohnesorge, B.1
Albrecht, M.2
Oshinowo, J.3
Arakawa, Y.4
Forchel, A.5
-
18
-
-
0035365156
-
Ultrafast gain recovery and modulation limitations in self-assemble quantum-dot devices
-
Jun.
-
T. Berg, S. Bischoff, I. Magnusdottir, and J. Mork, "Ultrafast gain recovery and modulation limitations in self-assemble quantum-dot devices," IEEE Photon. Technol. Letters, vol.13, no.6, pp. 541-543, Jun. 2001.
-
(2001)
IEEE Photon. Technol. Letters
, vol.13
, Issue.6
, pp. 541-543
-
-
Berg, T.1
Bischoff, S.2
Magnusdottir, I.3
Mork, J.4
-
19
-
-
33646558901
-
Carrier dynamics and saturation effect in (311)B InAs - InP quantum dot lasers
-
K. Veselinov, F. Grillot, P. Miska, E. Homeyer, P. Caroff, C. Platz, J. Even, X. Marie, O. Dehaese, S. Loualicshe, and A. Ramdane, "Carrier dynamics and saturation effect in (311)B InAs - InP quantum dot lasers," Opt Quantum Electron., vol.38, pp. 369-379, 2006.
-
(2006)
Opt Quantum Electron.
, vol.38
, pp. 369-379
-
-
Veselinov, K.1
Grillot, F.2
Miska, P.3
Homeyer, E.4
Caroff, P.5
Platz, C.6
Even, J.7
Marie, X.8
Dehaese, O.9
Loualicshe, S.10
Ramdane, A.11
-
20
-
-
0000421379
-
1-xAs-GaAs quantum dot lasers
-
1-xAs-GaAs quantum dot lasers," Phys. Rev. B, vol.61, no.11, pp. 7595-7603, 2000.
-
(2000)
Phys. Rev. B
, vol.61
, Issue.11
, pp. 7595-7603
-
-
Sugawara, M.1
Mukai, K.2
Nakata, Y.3
Ishikawa, H.4
-
21
-
-
33646405507
-
Time-resolved pump probe of 1.55 μm InAs-InP quantum dots under high resonant excitation
-
Apr.
-
C. Cornet, C. Labbé, H. Folliot, P. Caroff, C. Levallois, O. Dehaese, J. Even, A. Le Corre, and S. Loualiche, "Time-resolved pump probe of 1.55 μm InAs-InP quantum dots under high resonant excitation," Appl. Phys. Let, vol.88, pp. 171502-171502-3, Apr. 2006.
-
(2006)
Appl. Phys. Let
, vol.88
, pp. 1715020-1715023
-
-
Cornet, C.1
Labbé, C.2
Folliot, H.3
Caroff, P.4
Levallois, C.5
Dehaese, O.6
Even, J.7
Le Corre, A.8
Loualiche, S.9
|