Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 459-463

  Platz, C ^a   Paranthoen C ^a   Caroff, P ^a   Bertru, N ^a   Labbe C ^a   Even, J ^a   Dehaese, O ^a   Folliot, H ^a   Le Corre, A ^a   Loualiche, S ^a   Moreau, G ^a   Simon, J C ^a   Ramdane, A ^b  

^a UNIVERSITÉ DE RENNES 1   (France)

^b UNIV PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; GROUND STATE; LASER BEAM EFFECTS; LIGHT EMISSION; SEMICONDUCTOR GROWTH; TERNARY SYSTEMS;

BLOCKING BARRIER; ELECTRICAL INJECTION; LASER EMISSION; QUANTUM DOT LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 20344398540     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/023     Document Type: Article

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