Demonstration of midinfrared type-II InAs/GaSb superlattice photodiodes grown on GaAs substrate

Applied Physics Letters

Volumn 94, Issue 22, 2009, Pages

  Nguyen, Binh Minh ^a   Hoffman, Darin ^a   Huang, Edward Kwei Wei ^a   Bogdanov, Simeon ^a   Delaunay, Pierre Yves ^a   Razeghi, Manijeh ^a   Tidrow, Meimei Z ^b  

^a Northwestern University   (United States)

^b ARMED FORCES INSTITUTE OF PATHOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC STEP; BACKGROUND LIMITEDS; CUTOFF WAVELENGTHS; DETECTIVITY; DIFFERENTIAL RESISTANCES; GAAS SUBSTRATES; INAS/GASB SUPERLATTICES; LOW NUCLEATION TEMPERATURE; MIDINFRARED; OPERATING TEMPERATURE; REDUCED GROWTH RATE; SPECIFIC DETECTIVITY; UNCOOLED DETECTORS; ZERO BIAS;

CARRIER LIFETIME; HETEROJUNCTION BIPOLAR TRANSISTORS; PHOTODIODES; SEMICONDUCTING GALLIUM; SUBSTRATES;

GALLIUM ALLOYS;

EID: 66749084981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3148326     Document Type: Article

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