MBE growth of very short period InAs/GaSb type-II superlattices on (0 0 1)GaAs substrates

Journal of Physics D: Applied Physics

Volumn 40, Issue 21, 2007, Pages 6690-6693

  Hao, Ruiting ^a   Xu, Yingqiang ^a   Zhou, Zhiqiang ^a   Ren, Zhengwei ^a   Ni, Haiqiao ^a   He, Zhenhong ^a   Niu, Zhichuan ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON MICROSCOPY; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RAMAN SCATTERING; SPECTRUM ANALYSIS; SUPERLATTICES;

CRYSTALLINE PROPERTIES; MBE GROWTH; PHOTOLUMINESCENCE SPECTRA; TRANSITION ELECTRON MICROSCOPY;

EPILAYERS;

EID: 35548961042     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/21/031     Document Type: Article

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