High carrier lifetime InSb grown on GaAs substrates

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1071-1073

  Michel, E ^a   Mohseni, H ^a   Kim, J D ^a   Wojkowski, J ^a   Sandven, J ^a   Xu, J ^a   Razeghi, M ^a   Bredthauer, R ^b   Vu, P ^b   Mitchel, W ^c   Ahoujja, M ^c  

^a Northwestern University   (United States)

^b Lockheed Martin Fairchild Systems   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0006129464     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119731     Document Type: Article

References (9)

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