Metal organic chemical vapor deposition of metaphorphic InAs-GaSb superlattices on (0 0 1) GaAs substrates for mid-IR photodetector applications

Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 545-549

  Zhang, X B ^a   Ryou, J H ^a   Dupuis, R D ^a   Mou, S ^b   Chuang, S L ^b   Xu, C ^b   Hsieh, K C ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b University of Illinois at Urbana Champaign   (United States)

Author keywords

A1. Atomic force microscopy; A1. Photoluminescence; A1. Transmission electron microscopy; A1. X ray diffraction; B1. InAs GaSb Superlattices

Indexed keywords

ATOMIC FORCE MICROSCOPY; INFRARED IMAGING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; PHOTOLUMINESCENCE; SUPERLATTICES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GROWTH TEMPERATURE; INAS/GASB SUPERLATTICES; NANOPIPES; STRUCTURAL PROPERTIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 30344446346     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.10.025     Document Type: Conference Paper

References (7)

1. F. Fuchs, U. Weimer, W. Pletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl Appl. Phys. Lett. 71 1997 3251
2. H. Mohseni, J. Wojkowski, M. Razeghi, G. Brown, and W. Mitchel J. Quantum Electron. 35 1999 1041
3. Y. Wei, A. Gin, M. Razeghi, and G.J. Brown Appl. Phys. Lett. 81 2002 3675
4. E.R. Youngdale, J.R. Meyer, C.A. Hoffman, F.J. Bartoli, C.H. Grein, P.M. Young, H. Ehrenreich, R.H. Miles, and D.H. Chow Appl. Phys. Lett. 64 1994 3160
5. D.H. Chow, R.H. Miles, J.R. Soderstrom, and T.C. McGill Appl. Phys. Lett. 56 1990 1418
6. J.C.P. Chang, J. Chen, J.M. Fernandez, H.H. Wieder, and K.L. Kavanagh Appl. Phys. Lett. 60 1992 1129
7. S.P. Watkins, R. Ares, G. Soerensen, W. Zhong, C.A. Tran, J.E. Bryce, and C.R. Bolognesi J. Crystal Growth 170 1997 788