Simultaneous fabrication of very high aspect ratio positive nano- to milliscale structures

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Volumn 5, Issue 9, 2009, Pages 1043-1050

  Chen, Long Qing ^a   Chan Park, Mary B ^a   Zhang, Qing ^b   Chen, Peng ^a   Li, Chang Ming ^a   Li, Sai ^a  

^a Nanyang Technological University   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Etching; Nanostructures; Nanowalls; Silicon; Thin films

Indexed keywords

BONDING PROCESS; COMBINED METHOD; DEEP REACTIVE ION ETCHING; DIVERSE APPLICATIONS; ETCHING MASKS; FEATURE SIZES; GLUE BONDING; HF ETCHING; HIGH ASPECT RATIO; MASTER MOLDS; NANO PATTERN; NANOFLUIDIC SYSTEMS; NANOSCALE FEATURES; NANOWALLS; OPEN CHANNELS; OVER-ETCHING; POSITIVE FEATURES; REDUCTION TECHNIQUES; SI THERMAL OXIDATION; UV EMBOSSING;

AMORPHOUS SILICON; ELECTRON BEAM LITHOGRAPHY; FABRICATION; MOLDS; NANOFLUIDICS; NANOSTRUCTURES; OXIDATION; PHOTORESISTS; PRESSURE DROP; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON OXIDES; THIN FILM DEVICES; THIN FILMS;

ASPECT RATIO;

NANOMATERIAL; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SILICON DIOXIDE; SURFACE PROPERTIES;

EID: 66649123248     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200801210     Document Type: Article

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