Superhydrophobic modification of gate dielectrics for densely packed pentacene thin film transistors

Applied Physics Letters

Volumn 91, Issue 6, 2007, Pages

  Kim, Chang Su ^a   Jo, Sung Jin ^a   Kim, Jong Bok ^a   Ryu, Seung Yoon ^a   Noh, Joo Hyon ^a   Baik, Hong Koo ^a   Lee, Se Jong ^b   Kim, Youn Sang ^c  

^a Yonsei University   (South Korea)

^b Kyungsung University   (South Korea)

^c Ewha Womans University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; FLUORINE COMPOUNDS; GATE DIELECTRICS; HYDROPHOBICITY; LEAKAGE CURRENTS; THRESHOLD VOLTAGE;

FIELD EFFECT MOBILITIES; FLUORINE ATOMS; PLASMA TREATMENT; SUPERHYDROPHOBIC MODIFICATION;

THIN FILM TRANSISTORS;

EID: 34547838670     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2767779     Document Type: Article

References (19)

1. H. Klauk, U. Zschieschang, J. Pflaum, and M. Halik, Nature (London) 445, 745 (2007).
2. M. M. Ling, P. Erk, M. Gomez, M. Koenemann, J. Locklin, and Z. Bao, Adv. Mater. (Weinheim, Ger.) 19, 1123 (2007).
3. O. D. Jurchescu, M. Popinciuc, B. J. Wees, and T. T. M. Palstra, Adv. Mater. (Weinheim, Ger.) 19, 688 (2007).
4. A. Facchetti, M. H. Yoon, and T. J. Marks, Adv. Mater. (Weinheim, Ger.) 17, 1705 (2005).
5. Y. H. Yan, M. B. Park, and C. Y. Yue, Langmuir 21, 8905 (2005).
6. K. Maex, M. R. Baklanov, D. Shamiryan, F. Iacopi, S. H. Brongersma, and Z. S. Yanovitskaya, J. Appl. Phys. 93, 8793 (2003).
7. Y. C. Hong and H. S. Uhm, Appl. Phys. Lett. 88, 244101 (2006).
8. M. H. Yoon, C. Kim, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc. 128, 12851 (2006).
9. D. K. Hwang, C. S. Kim, J. M. Choi, K. Lee, J. H. Park, E. Kim, H. K. Baik, J. H. Kim, and S. Im, Adv. Mater. (Weinheim, Ger.) 18, 2299 (2006).
10. C. S. Kim, S. J. Jo, S. W. Lee, W. J. Kim, H. K. Baik, S. J. Lee, D. K. Hwang, and S. I. Im, Appl. Phys. Lett. 88 243515 (2006).
11. C. S. Kim, S. J. Jo, S. W. Lee, W. J. Kim, H. K. Baik, and S. J. Lee, Adv. Funct. Mater. 17, 958 (2007).
12. H. J. Ahn, S. J. Rho, K. C. Kim, J. B. Kim, B. H. Hwang, C. J. Park, and H. K. Baik, Jpn. J. Appl. Phys., Part 1 44, 4092 (2005).
13. I. Reid and G. Hughes, Semicond. Sci. Technol. 21, 1354 (2006).
14. H. G. O. Sandberg, T. G. Backlund, R. Osterbacka, and H. Stubb, Adv. Mater. (Weinheim, Ger.) 16, 1112 (2004).
15. K. Endo and T. Tatsumi, J. Vac. Sci. Technol. B 15, 3134 (1997).
16. S. Y. Yang, K. Shin, and C. E. Park, Adv. Funct. Mater. 15, 1806 (2005).
17. S. Y. Yang, K. Shin, S. H. Kim, H. Jeon, J. H. Kang, H. Yang, and C. E. Park, J. Phys. Chem. B 110, 20302 (2006).
18. S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Ogawa, and Y. Iwasa, Nat. Mater. 3, 317 (2004).
19. J. Takeya, T. Nishikawa, T. Takenobu, S. Kobayashi, Y. Iwasa, T. Mitani, C. Goldmann, C. Krellner, and B. Batlogg, Appl. Phys. Lett. 85, 5078 (2004).