Mechanism of formation of the response of a hydrogen gas sensor based on a silicon MOS diode

Semiconductors

Volumn 42, Issue 3, 2008, Pages 334-338

  Gaman, V I ^a   Balyuba, V I ^a   Gritsyk, V Yu ^a   Davydova, T A ^a   Kalygina, V M ^a  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 41549160319     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/s1063782608030172     Document Type: Article

References (9)

1. J. Fogelberg, M. Eriksson, H. Dannetun, and L.-G. Peterson, J. Appl. Phys. 78, 988 (1995).
2. A. Diligenti, M. Stagi, and V. Ciuti, Solid State Commun. 45, 347 (1983).
3. V. I. Gaman and V. M. Kalygina, Izv. Vyssh. Uchebn. Zaved., Fiz. 46(4), 3 (2003).
4. V. S. Vavilov, V. F. Kiselev, and B. N. Mukashev, Defects in the Bulk and at the Surface of Silicon (Nauka, Moscow, 1990) [in Russian].
5. J. Chevallier and M. Auconturier, Annu. Rev. Mater. Sci. 18, 219 (1988).
6. É. M. Omel'yanovskiǐ and F. Ya. Polyakova, Vysokochist. Veshchestva, No. 5, 5 (1988).
7. V. I. Gaman, M. O. Duchenko, and V. M. Kalygina, Izv. Vyssh. Uchebn. Zaved., Fiz. 42(9), 3 (1999).
8. L.-G. Peterson, H. M. Dannetun, J. Fogelberg, and I. Lundström, J. Appl. Phys. 58, 404 (1985).
9. I. A. Myasnikov, V. Ya. Sukharev, and L. Yu. Kupriyanov, Semiconductor Sensors in Physicochemical Investigations (Nauka, Moscow, 1991) [in Russian].