Fabrication of microstructures in III-V semiconductors by proton beam writing

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 267, Issue 12-13, 2009, Pages 2321-2326

  Menzel, F ^a   Spemann, D ^a   Lenzner, J ^a   Bohlmann W ^a   Zimmermann, G ^a   Butz, T ^a  

^a UNIVERSITY OF LEIPZIG   (Germany)

Author keywords

Electrochemical etching; GaAs; InP; Proton beam writing

Indexed keywords

ETCHED STRUCTURES; FE-DOPED; GAAS; HELIUM ION; HF SOLUTIONS; HIGH ENERGY PROTON; II-IV SEMICONDUCTORS; INP; IRRADIATED AREA; MATERIAL REMOVAL; N-TYPE MATERIALS; NON-IRRADIATED MATERIALS; PROTON BEAM WRITING; SAMPLE SURFACE; SEMI-INSULATING; SEMI-INSULATING MATERIALS; UNDERETCHING;

BUILDING MATERIALS; DISSOLUTION; GALLIUM ALLOYS; HELIUM; HYDROFLUORIC ACID; ION BEAM LITHOGRAPHY; IONS; MICROSTRUCTURE; POROUS MATERIALS; PROTON BEAMS; PROTON IRRADIATION; PROTONS; SEMICONDUCTING GALLIUM;

ELECTROCHEMICAL ETCHING;

EID: 66349125561     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2009.03.023     Document Type: Article

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