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Electrochimica Acta

Volumn 51, Issue 11, 2006, Pages 2182-2187

Selective etching of n-InP(1 0 0) triggered at surface dislocations induced by nanoscratching

(5) Gassilloud, R a,b Michler, J a Ballif, C a Gasser, Ph a Schmuki, P b

a SWISS FEDERAL LABORATORIES FOR MATERIALS SCIENCE AND TECHNOLOGY (Switzerland)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

Contact mechanics; Critical shearing; Dislocations; Electrochemical dissolution; n InP(1 0 0); Nanoscratching; Pore formation

Indexed keywords

DEFECTS; ETCHING; MORPHOLOGY; NANOSTRUCTURED MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

CONTACT MECHANICS; CRITICAL SHEARING; ELECTROCHEMICAL DISSOLUTION; NANOSCRATCHING; PORE FORMATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 32044458193 PISSN: 00134686 EISSN: None Source Type: Journal
DOI: 10.1016/j.electacta.2005.03.085 Document Type: Conference Paper

Times cited : (14)

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