Hole transport through proton-irradiated p -type silicon wafers during electrochemical anodization

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 3, 2006, Pages

  Breese, M B H ^a   Champeaux, F J T ^a   Teo, E J ^a   Bettiol, A A ^a   Blackwood, D J ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33144461127     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.035428     Document Type: Article

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